MBRH12020 GeneSiC Semiconductor, MBRH12020 Datasheet
MBRH12020
Manufacturer Part Number
MBRH12020
Description
SCHOTTKY RECTIFIER, 20V, 120A, D-67 (HALF PAK)
Manufacturer
GeneSiC Semiconductor
Datasheet
1.MBRH12020.pdf
(2 pages)
Specifications of MBRH12020
Repetitive Reverse Voltage Vrrm Max
20V
Forward Current If(av)
120A
Forward Voltage Vf Max
650mV
Forward Surge Current Ifsm Max
2kA
Diode Type
Schottky
www.genesicsemi.com
Features
• High Surge Capability
• Types up to 100 V V
Maximum ratings, at T
Repetitive peak reverse
voltage
RMS reverse voltage
DC blocking voltage
Continuous forward current
Surge non-repetitive forward
current, Half Sine Wave
Operating temperature
Storage temperature
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Diode forward voltage
Reverse current
Thermal characteristics
Thermal resistance, junction
- case
Silicon Power
Schottky Diode
Parameter
RRM
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Symbol
Symbol
V
V
V
R
I
V
T
F,SM
V
RRM
RMS
I
T
I
thJC
DC
stg
F
R
F
j
T
V
I
V
C
F
R
R
= 120 A, T
= 25 °C, t
= 20 V, T
= 20 V, T
Conditions
T
Conditions
C
≤ 136 °C
p
j
j
j
= 125 °C
= 8.3 ms
= 25 °C
= 25 °C
MBRH12020 (R) MBRH12030 (R)
MBRH12020 (R) MBRH12030 (R)
-40 to 175
-40 to 175
2000
0.65
120
250
0.8
1
20
20
14
20
4
MBRH12020 thru MBRH12040R
-40 to 175
-40 to 175
2000
0.65
120
250
0.8
30
30
21
30
4
MBRH12035 (R)
MBRH12035 (R)
-40 to 175
-40 to 175
D-67 Package
2000
0.65
120
250
0.8
35
35
25
35
4
V
I
F
RRM
= 120 A
= 20 V - 100 V
MBRH12040 (R)
MBRH12040 (R)
-40 to 175
-40 to 175
2000
0.65
120
250
0.8
40
40
28
40
4
°C/W
Unit
Unit
mA
°C
°C
V
V
V
V
A
A
V
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MBRH12020 Summary of contents
Page 1
... R Thermal characteristics Thermal resistance, junction R thJC - case www.genesicsemi.com MBRH12020 thru MBRH12040R Conditions MBRH12020 (R) MBRH12030 ( ≤ 136 °C 120 ° 8.3 ms 2000 C p -40 to 175 -40 to 175 Conditions MBRH12020 (R) MBRH12030 ( 120 °C 0. ° 125 °C 250 100 V RRM I = 120 A F D-67 Package ...
Page 2
... MBRH12020 thru MBRH12040R 2 ...