BYT52G-TR Vishay, BYT52G-TR Datasheet - Page 2

AVALANCHE DIODE, 1.4A, 400V, SOD-57

BYT52G-TR

Manufacturer Part Number
BYT52G-TR
Description
AVALANCHE DIODE, 1.4A, 400V, SOD-57
Manufacturer
Vishay
Datasheet

Specifications of BYT52G-TR

Repetitive Reverse Voltage Vrrm Max
400V
Forward Current If(av)
1.4A
Forward Voltage Vf Max
1.3V
Reverse Recovery Time Trr Max
200ns
Diode Type
Fast Recovery
Product
Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
400 V
Forward Voltage Drop
1.3 V at 1 A
Recovery Time
200 ns
Forward Continuous Current
1.4 A
Max Surge Current
50 A
Reverse Current Ir
5 uA
Mounting Style
SMD/SMT
Package / Case
SOD-57
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
BYT52A, BYT52B, BYT52D, BYT52G, BYT52J, BYT52K, BYT52M
Vishay Semiconductors
TYPICAL CHARACTERISTICS (T
www.vishay.com
2
MAXIMUM THERMAL RESISTANCE (T
PARAMETER
Junction ambient
ELECTRICAL CHARACTERISTICS (T
PARAMETER
Forward voltage
Reverse current
Reverse recovery time
Fig. 2 - Max. Forward Current vs. Forward Voltage
Fig. 1 - Max. Thermal Resistance vs. Lead Length
16328
0.001
0.01
120
100
949552
0.1
10
80
60
40
20
0
1
0
0
T
0.5
j
5
= 175 °C
V
F
l - Lead Length (mm)
- Forward Voltage (V)
1.0
10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
For technical questions within your region, please contact one of the following:
T
j
= 25 °C
1.5
15
I
F
= 0.5 A, I
T
Lead length l = 10 mm, T
2.0
20
l
L
V
On PC board with spacing 25 mm
= constant
R
TEST CONDITION
= V
amb
Fast Avalanche Sinterglass Diode
2.5
25
V
RRM
l
R
I
R
TEST CONDITION
F
= 25 °C, unless otherwise specified)
= 1 A, i
= V
= 1 A
, T
amb
3.0
30
RRM
j
= 150 °C
amb
R
= 25 °C, unless otherwise specified)
= 0.25 A
= 25 °C, unless otherwise specified)
L
= constant
PART
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
Fig. 4 - Max. Reverse Current vs. Junction Temperature
SYMBOL
SYMBOL
16329
16330
DiodesEurope@vishay.com
R
R
1000
100
thJA
thJA
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
V
t
10
I
I
R
R
rr
0
F
1
25
0
PCB: d = 25 mm
V
R
R
20
thJA
T
= V
amb
50
T
= 100 K/W
j
RRM
MIN.
40
- Junction Temperature (°C)
- Ambient Temperature (°C)
-
-
-
-
60
75
VALUE
80 100 120 140 160 180
100
45
100
TYP.
-
-
-
-
R
125
Document Number: 86029
thJA
I = 10 mm
half sinewave
V
= 45 K/W
R
= V
MAX.
150
150
200
1.3
Rev. 1.7, 30-Jul-10
RRM
5
175
UNIT
K/W
K/W
UNIT
μA
μA
ns
V

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