BYT53B-TAP Vishay, BYT53B-TAP Datasheet - Page 3

• Manufacturer Part Number: BYT53B-TAP
• Description: AVALANCHE DIODE, 1.9A, 100V, SOD-57
• Manufacturer: Vishay

Specifications of BYT53B-TAP

• Repetitive Reverse Voltage Vrrm Max: 100V
• Forward Current If(av): 1.9A
• Forward Voltage Vf Max: 1.1V
• Reverse Recovery Time Trr Max: 50ns
• Forward Surge Current Ifsm Max: 50A
• Diode Type: Fast Recovery
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 100 V
• Forward Voltage Drop: 1.1 V at 1 A
• Recovery Time: 50 ns
• Forward Continuous Current: 1.9 A
• Max Surge Current: 50 A
• Reverse Current Ir: 5 uA
• Mounting Style: SMD/SMT
• Package / Case: SOD-57
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 3. Max. Average Forward Current vs. Ambient Temperature
Package Dimensions in mm (Inches)
Document Number 86030
Rev. 1.8, 14-Apr-05
16334
16335
Figure 4. Reverse Current vs. Junction Temperature
1000
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Sintered Glass Case
SOD-57
100
10
1
0
25
20 40 60 80 100 120 140 160 180
PCB: d = 25 mm
R
T
V
thJA
amb
R
50
T
= V
26(1.014) min.
j
= 100 K/W
- Junction Temperature ( ° C )
- Junction Temperature ( ° C )
RRM
75
100
R
V
half sinewave
thJA
125
Cathode Identification
R
l = 10 mm
= V
= 45 K/W
RRM
150
4.0 (0.156) max.
175
3.6 (0.140)max.
16337
16336
Figure 5. Max. Reverse Power Dissipation vs. Junction
60
50
40
30
20
10
26(1.014) min.
Figure 6. Diode Capacitance vs. Reverse Voltage
220
200
180
160
140
120
100
0
80
60
40
20
0.1
0
25
ISO Method E
V
50
T
R
j
- Junction Temperature ( ° C )
- Reverse Voltage ( V )
1
75
0.82 (0.032) max.
Temperature
Vishay Semiconductors
@80 % V
P
100
R
94 9538
-Limit
10
@100 % V
P
R
125
R
-Limit
f = 1 MHz
V
R
= V
150
R
RRM
100
BYT53.
175
www.vishay.com
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