BYV12-TR Vishay, BYV12-TR Datasheet - Page 2

• Manufacturer Part Number: BYV12-TR
• Description: AVALANCHE DIODE, 1.5A, 100V, SOD-57
• Manufacturer: Vishay

Specifications of BYV12-TR

• Repetitive Reverse Voltage Vrrm Max: 100V
• Forward Current If(av): 1.5A
• Forward Voltage Vf Max: 1.5V
• Reverse Recovery Time Trr Max: 300ns
• Diode Type: Fast Recovery
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS (T
Document Number: 86039
Rev. 1.7, 30-Jul-10
ELECTRICAL CHARACTERISTICS (T
PARAMETER
Forward voltage
Reverse current
Reverse recovery time
Reverse recovery charge
949517
Fig. 1 - Typ. Thermal Resistance vs. Lead Length
160
120
240
200
120
100
949101
80
40
80
60
40
20
Reverse/Repetitive Peak Reverse Voltage
0
0
0
0
V
R
, V
Fig. 2 - Junction Temperature vs.
R
RRM
thJA
BYV12
T
5
200
l
L
= constant
= 100 K/W
- Rev./Rep. Peak Rev. Voltage (V)
BYV13
l - Lead Length (mm)
10
l
400
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BYV14
For technical questions within your region, please contact one of the following:
15
600
I
F
BYV15
= 0.5 A, I
20
V
I
F
R
TEST CONDITION
= 1 A, dI/dt = 5 A/μs
800
= V
amb
Fast Avalanche Sinterglass Diode
25
BYV16
V
V
V
RRM
R
RRM
R
R
I
F
= 25 °C, unless otherwise specified)
= 1 A, i
= V
= 1 A
1000
, T
30
amb
RRM
j
= 150 °C
R
= 25 °C, unless otherwise specified)
= 0.25 A
BYV12, BYV13, BYV14, BYV15, BYV16
PART
Fig. 4 - Max. Average Forward Current vs. Ambient Temperature
16375
16376
0.001
SYMBOL
0.01
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.1
[e-mail]
10
Fig. 3 - Forward Current vs. Forward Voltage
0
1
Q
V
I
I
t
0
0
R
R
rr
F
rr
PCB: d = 25 mm
R
20
thJA
T
T
0.5
amb
j
= 175 °C
= 100 K/W
40
V
- Ambient Temperature (°C)
MIN.
F
- Forward Voltage (V)
-
-
-
-
-
1.0
Vishay Semiconductors
60
80 100 120 140 160 180
T
j
1.5
= 25 °C
TYP.
60
R
1
-
-
-
thJA
2.0
I = 10 mm
half sinewave
= 45 K/W
V
R
= V
2.5
RRM
MAX.
150
300
200
1.5
5
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3.0
UNIT
μA
μA
nC
ns
V
125