MURB820TRRPBF Vishay, MURB820TRRPBF Datasheet - Page 4

• Manufacturer Part Number: MURB820TRRPBF
• Description: ULTRA FAST DIODE, 8A, 200V, D2-PAK
• Manufacturer: Vishay

Specifications of MURB820TRRPBF

• Repetitive Reverse Voltage Vrrm Max: 200V
• Forward Current If(av): 8A
• Forward Voltage Vf Max: 975mV
• Reverse Recovery Time Trr Max: 20ns
• Forward Surge Current Ifsm Max: 100A
• Diode Type: Schottky
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 200 V
• Forward Voltage Drop: 0.975 V
• Recovery Time: 35 ns
• Forward Continuous Current: 8 A
• Max Surge Current: 100 A
• Reverse Current Ir: 5 uA
• Mounting Style: SMD/SMT
• Package / Case: D2PAK
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

VS-MURB820PbF, VS-MURB820-1PbF
Vishay High Power Products
Note
(1)
www.vishay.com
4
Formula used: T
Pd = Forward power loss = I
Pd
REV
180
170
160
150
140
130
10
Fig. 5 - Maximum Allowable Case Temperature vs.
8
6
4
2
0
= Inverse power loss = V
0
0
Fig. 6 - Forward Power Loss Characteristics
See note (1)
I
I
F(AV)
F(AV)
Square wave (D = 0.50)
Rated V
C
- Average Forward Current (A)
- Average Forward Current (A)
Average Forward Current
= T
3
3
R
DC
applied
J
- (Pd + Pd
F(AV)
6
6
R1
x V
REV
x I
DC
FM
) x R
R
(1 - D); I
For technical questions, contact:
at (I
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
9
9
thJC
RMS limit
F(AV)
;
R
/D) (see fig. 6);
at V
12
12
R1
= Rated V
Ultrafast Rectifier,
8 A FRED Pt
R
[e-mail]
®
200
160
120
50
40
30
20
10
80
40
0
Fig. 7 - Typical Reverse Recovery Time vs. dI
100
100
V
T
T
Fig. 8 - Typical Stored Charge vs. dI
J
J
I
I
I
R
F
F
F
= 125 °C
= 25 °C
= 160 V
= 16 A
= 8 A
= 4 A
dI
dI
F
F
/dt (A/µs)
/dt (A/µs)
V
T
T
J
J
R
= 125 °C
= 25 °C
= 160 V
Document Number: 94081
I
I
I
F
F
F
= 16 A
= 8 A
= 4 A
Revision: 11-Mar-10
F
/dt
1000
1000
F
/dt