SD453N16S20PC Vishay, SD453N16S20PC Datasheet - Page 8

• Manufacturer Part Number: SD453N16S20PC
• Description: FAST RECOVERY DIODE, 400A 1.6KV B-8
• Manufacturer: Vishay

Specifications of SD453N16S20PC

• Repetitive Reverse Voltage Vrrm Max: 1.6V
• Forward Current If(av): 400A
• Forward Voltage Vf Max: 2.2V
• Reverse Recovery Time Trr Max: 2µs
• Diode Type: Fast Recovery
• Voltage - Forward (vf) (max) @ If: 2.2V @ 1500A
• Voltage - Dc Reverse (vr) (max): 1600V (1.6kV)
• Current - Average Rectified (io): 400A
• Current - Reverse Leakage @ Vr: 50mA @ 1600V
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 2µs
• Mounting Type: Chassis, Stud Mount
• Package / Case: B-8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Contains lead / RoHS non-compliant
• Other names: *SD453N16S20PC

SD453N/R Series
Vishay High Power Products
www.vishay.com
8
1E4
1E3
1E2
1E4
1E3
1E2
1E4
1E3
1E2
1E1
1E1
1E1
S D453N/ R..S 20 S eries
T rapezoidal Pulse
T = 150°C, V
dv/ d t = 1000V/ µs
di/ dt = 100A/ µs
J
tp
tp
Fig. 30 - Maximum Total Energy Loss
0.2
Fig. 28 - Maximum Total Energy Loss
6000
Fig. 29 - Frequency Characteristics
4000
RRM
3000
Per Pulse Characteristics
Per Pulse Characteristics
tp
Pulse Basewidth (µs)
0.6
= 800V
1E2
1E2
1E2
2000
Pulse Bas ewidth (µs)
Pulse Basewidth (µs)
0.4
0.8
0.4
1500
1000
0.6
0.2
S inusoidal Pulse
T = 150°C, V
dv/ d t = 1000V/ µs
S D453N/ R...S 30 S eries
1
J
0.1
1
2
600
2
4
4
400
6
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S D453N/ R..S 20 S eries
T rapezoida l Pulse
T = 70°C, V
dv/ dt = 1000V/ us,
di/ dt = 100A/ us
6
C
1E3
1E3
1E3
RRM
10 joules per pulse
10 joules per pulse
200
= 800V
100
(Stud Version), 400/450 A
RRM
Fast Recovery Diodes
= 800V
50 Hz
1E4
1E4
1E4
1E4
1E3
1E2
1E4
1E3
1E2
1E4
1E3
1E2
1E1
1E1
1E1
tp
tp
4000
Fig. 32 - Maximum Total Energy Loss
6000
Fig. 31 - Frequency Characteristics
Fig. 33 - Frequency Characteristics
4000
3000
0.6
3000
S D453N/ R..S 30 S eries
T rapezoidal Pulse
T = 150°C, V
dv/ dt = 1000V/ µs; di/ dt = 300A/ µs
J
2000
Per Pulse Characteristics
1500
2000
0.8
1E 2
1E2
1E2
1000
Puls e Basewidth (µs)
Puls e Basewidth (µs)
Puls e Basewidth (µs)
6000
1
1000
RRM
tp
2
600
400
= 800V
4
400
Document Number: 93176
6
S inusoida l Pulse
T = 70°C, V
dv/ d t = 1000V/ us
S D453N/ R..S 30 S eries
200 100
C
S D453N/ R..S 30 S eries
1E3
T rapezoidal Pulse
T = 70°C, V
dv/ dt = 1000V/ us,
di/ dt = 300A/ us
1E3
1E3
10 joules per pulse
200
Revision: 08-Apr-08
100
RRM
50 Hz
RRM
= 800V
= 800V
50 Hz
1E4
1E 4
1E4