SD453N25S20PC Vishay, SD453N25S20PC Datasheet - Page 8
![no-image](/images/manufacturer_photos/0/6/697/vishay_sml.jpg)
SD453N25S20PC
Manufacturer Part Number
SD453N25S20PC
Description
FAST RECOVERY DIODE, 400A 2.5KV B-8
Manufacturer
Vishay
Specifications of SD453N25S20PC
Repetitive Reverse Voltage Vrrm Max
2.5kV
Forward Current If(av)
400A
Forward Voltage Vf Max
2.2V
Reverse Recovery Time Trr Max
2µs
Diode Type
Fast Recovery
Voltage - Forward (vf) (max) @ If
2.2V @ 1500A
Voltage - Dc Reverse (vr) (max)
2500V (2.5kV)
Current - Average Rectified (io)
400A
Current - Reverse Leakage @ Vr
50mA @ 2500V
Speed
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)
2µs
Mounting Type
Chassis, Stud Mount
Package / Case
B-8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*SD453N25S20PC
SD453N/R Series
Vishay High Power Products
www.vishay.com
8
1E4
1E3
1E2
1E4
1E3
1E2
1E4
1E3
1E2
1E1
1E1
1E1
S D453N/ R..S 20 S eries
T rapezoidal Pulse
T = 150°C, V
dv/ d t = 1000V/ µs
di/ dt = 100A/ µs
J
tp
tp
Fig. 30 - Maximum Total Energy Loss
0.2
Fig. 28 - Maximum Total Energy Loss
6000
Fig. 29 - Frequency Characteristics
4000
RRM
3000
Per Pulse Characteristics
Per Pulse Characteristics
tp
Pulse Basewidth (µs)
0.6
= 800V
1E2
1E2
1E2
2000
Pulse Bas ewidth (µs)
Pulse Basewidth (µs)
0.4
0.8
0.4
1500
1000
0.6
0.2
S inusoidal Pulse
T = 150°C, V
dv/ d t = 1000V/ µs
S D453N/ R...S 30 S eries
1
J
0.1
1
2
600
2
4
4
400
6
For technical questions, contact: ind-modules@vishay.com
S D453N/ R..S 20 S eries
T rapezoida l Pulse
T = 70°C, V
dv/ dt = 1000V/ us,
di/ dt = 100A/ us
6
C
1E3
1E3
1E3
RRM
10 joules per pulse
10 joules per pulse
200
= 800V
100
(Stud Version), 400/450 A
RRM
Fast Recovery Diodes
= 800V
50 Hz
1E4
1E4
1E4
1E4
1E3
1E2
1E4
1E3
1E2
1E4
1E3
1E2
1E1
1E1
1E1
tp
tp
4000
Fig. 32 - Maximum Total Energy Loss
6000
Fig. 31 - Frequency Characteristics
Fig. 33 - Frequency Characteristics
4000
3000
0.6
3000
S D453N/ R..S 30 S eries
T rapezoidal Pulse
T = 150°C, V
dv/ dt = 1000V/ µs; di/ dt = 300A/ µs
J
2000
Per Pulse Characteristics
1500
2000
0.8
1E 2
1E2
1E2
1000
Puls e Basewidth (µs)
Puls e Basewidth (µs)
Puls e Basewidth (µs)
6000
1
1000
RRM
tp
2
600
400
= 800V
4
400
Document Number: 93176
6
S inusoida l Pulse
T = 70°C, V
dv/ d t = 1000V/ us
S D453N/ R..S 30 S eries
200 100
C
S D453N/ R..S 30 S eries
1E3
T rapezoidal Pulse
T = 70°C, V
dv/ dt = 1000V/ us,
di/ dt = 300A/ us
1E3
1E3
10 joules per pulse
200
Revision: 08-Apr-08
100
RRM
50 Hz
RRM
= 800V
= 800V
50 Hz
1E4
1E 4
1E4