HSMS-286Y-TR1G Avago Technologies US Inc., HSMS-286Y-TR1G Datasheet - Page 4

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HSMS-286Y-TR1G

Manufacturer Part Number
HSMS-286Y-TR1G
Description
RF DIODE, SCHOTTKY 0.3PF 7V SOD-523
Manufacturer
Avago Technologies US Inc.
Datasheet

Specifications of HSMS-286Y-TR1G

Forward Voltage Vf Max
350mV
Diode Case Style
SOD-523
Termination Type
SMD
Junction Temperature, Tj Max
150°C
Forward Voltage
350mV
Forward Current If
1mA
Diode Type
RF Schottky
Voltage - Peak Reverse (max)
4V
Capacitance @ Vr, F
0.3pF @ 0V, 1MHz
Package / Case
SC-79, SOD-523
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Max
-
Power Dissipation (max)
-
Resistance @ If, F
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
R
C
R
where
I
I
T = temperature, °K
n = ideality factor (see table of SPICE parameters)
Note:
To effectively model the packaged HSMS-286x product,
please refer to Application Note AN1124.
Equivalent Linear Circuit Model, Diode chip
4
b
s
S
j
j
= saturation current (see table of SPICE parameters)
= externally applied bias current in amps
=
= junction capacitance (see Table of SPICE parameters)
= series resistance (see Table of SPICE parameters)
8.33 X 10
R
I
S
b
+ I
s
-5
nT
R
C
j
j
SPICE Parameters
Parameter
P
P
T
B
C
B
E
I
R
(XTI)
M
N
BV
I
(VJ)
J0
S
G
V
S
Units
pF
eV
A
A
Ω
V
V
1 E ‑ 5
5 E ‑ 8
Value
0.18
0.69
1.08
0.65
7.0
6.0
0.5
2

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