1N4448-TR Vishay, 1N4448-TR Datasheet - Page 2
![SWITCHING DIODE, 100V, 150mA, DO-35](/photos/22/8/220878/4420057_sml.jpg)
1N4448-TR
Manufacturer Part Number
1N4448-TR
Description
SWITCHING DIODE, 100V, 150mA, DO-35
Manufacturer
Vishay
Datasheet
1.1N4448-TR.pdf
(4 pages)
Specifications of 1N4448-TR
Diode Type
Switching
Forward Current If(av)
150mA
Repetitive Reverse Voltage Vrrm Max
100V
Forward Voltage Vf Max
1V
Reverse Recovery Time Trr Max
8ns
Forward Surge Current Ifsm Max
2A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
1N4448-TR
Manufacturer:
VSS
Quantity:
400
1N4448
Vishay Semiconductors
Electrical Characteristics
T
Typical Characteristics
T
www.vishay.com
2
Forward voltage
Reverse current
Breakdown voltage
Diode capacitance
Rectification efficiency
Reverse recovery time
amb
amb
Figure 1. Forward Voltage vs. Junction Temperature
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
94 9169
94 9171
Figure 2. Forward Current vs. Forward Voltage
1000
Parameter
100
0.1
1.2
1.0
0.8
0.6
0.4
0.2
10
1
0
- 30
0
1N4448
T
0.4
j
0
- Junction Temperature (°C)
V
F
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
- Forward Voltage (V)
0.8
For technical questions within your region, please contact one of the following:
30
I
F
Scattering Limit
V
0.1 mA
= 100 mA
R
1.2
60
I
= 0, f = 1 MHz, V
F
i
I
R
V
R
V
= I
I
T = 25 °C
HF
F
R
= 0.1 x I
= 100 µA, t
j
R
= 10 mA, V
= 20 V, T
Test condition
= 2 V, f = 100 MHz
90
= 10 mA, i
1.6
I
F
t
V
V
p
I
F
= 100 mA
10 mA
R
R
= 0.3 ms
1 m A
= 5 mA
R
= 20 V
= 75 V
, R
120
2.0
j
p
= 150 °C
/T = 0.01,
L
R
R
= 100 Ω
HF
= 6 V,
= 1 mA
= 50 mV
Symbol
V
C
V
V
(BR)
I
I
I
η
t
t
R
R
R
rr
rr
F
F
D
r
94 9098
1000
Figure 3. Reverse Current vs. Reverse Voltage
100
10
1
DiodesEurope@vishay.com
1
T
Scattering Limit
j
Min.
620
100
= 25 °C
45
V
R
- Reverse Voltage (V)
Typ.
10
Document Number 81858
1000
Max.
720
25
50
5
4
8
4
Rev. 1.1, 17-Aug-10
100
Unit
mV
mV
nA
µA
µA
pF
ns
ns
%
V