1N4151-TAP Vishay, 1N4151-TAP Datasheet - Page 2

• Manufacturer Part Number: 1N4151-TAP
• Description: SWITCHING DIODE, 75V, 150mA, DO-35
• Manufacturer: Vishay

Specifications of 1N4151-TAP

• Diode Type: Small Signal
• Forward Current If(av): 150mA
• Repetitive Reverse Voltage Vrrm Max: 75V
• Forward Voltage Vf Max: 1V
• Reverse Recovery Time Trr Max: 4ns
• Forward Surge Current Ifsm Max: 2A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1N4151
Vishay Semiconductors
Electrical Characteristics
T
Typical Characteristics
T
www.vishay.com
2
Forward voltage
Reverse current
Breakdown voltage
Diode capacitance
Reverse recovery time
amb
amb
94 9151
Figure 1. Reverse Current vs. Junction Temperature
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
94 9152
1000
Figure 2. Forward Current vs. Forward Voltage
0.01
100
100
0.1
0.1
10
Parameter
10
1
1
0
0
Scattering Limit
T = 100 °C
0.4
T
40
j
j
V - Forward Voltage (V)
- Junction Temperature (°C)
F
[e-mail], [e-mail],
0.8
80
T = 25 °C
For technical questions within your region, please contact one of the following:
j
1.2
120
I
F
i
R
V
= I
I
F
= 0.1 x I
R
V
V
= 10 mA, V
R
R
= 50 V, T
R
Test condition
V
= 10 mA, i
1.6
160
= 50 V
= 0, f = 1 MHz,
I
V
HF
F
I
R
R
= 50 mA
= 5 µA
= 50 mV
= 50 V
R
, R
2.0
j
200
= 150 °C
L
R
R
= 100 Ω
= 6 V,
= 1 mA
Symbol
V
C
V
I
I
(BR)
t
t
R
R
rr
rr
F
D
94 9153
Figure 3. Diode Capacitance vs. Reverse Voltage
3.0
2.5
2.0
1.5
1.0
0.5
0
[e-mail]
0.1
Min.
75
V
R
- Reverse Voltage (V)
1
Typ.
880
14
T
f = 1 MHz
j
= 25 °C
10
Document Number 85523
Max.
1000
50
50
2
4
2
Rev. 1.8, 17-Aug-10
100
Unit
mV
nA
µA
pF
ns
ns
V