LS4154-GS08 Vishay, LS4154-GS08 Datasheet - Page 2

SWITCHING DIODE, 35V, 150mA, SOD-80

LS4154-GS08

Manufacturer Part Number
LS4154-GS08
Description
SWITCHING DIODE, 35V, 150mA, SOD-80
Manufacturer
Vishay
Datasheet

Specifications of LS4154-GS08

Diode Type
Small Signal
Forward Current If(av)
150mA
Repetitive Reverse Voltage Vrrm Max
35V
Forward Voltage Vf Max
1V
Reverse Recovery Time Trr Max
4ns
Forward Surge Current Ifsm Max
2A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
LS4154
Vishay Semiconductors
Electrical Characteristics
T
Typical Characteristics
T
www.vishay.com
2
Forward voltage
Reverse voltage
Breakdown voltage
Diode capacitance
Reverse recovery time
amb
amb
Figure 1. Reverse Current vs. Junction Temperature
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
94 9152
94 9154
Figure 2. Forward Current vs. Forward Voltage
1000
0.01
100
Parameter
100
0.1
0.1
10
10
1
1
0
0
Scattering Limit
T = 100 °C
0.4
T
40
j
j
V - Forward Voltage (V)
- Junction Temperature (°C)
F
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
0.8
For technical questions within your region, please contact one of the following:
80
T = 25 °C
j
I
120
1.2
F
i
R
V
I
= I
I
R
F
= 0.1 x I
R
V
= 5 μA, t
= 10 mA, V
V
R
= 25 V, T
R
Test condition
R
V
= 10 mA, i
= 0, f = 1 MHz,
t
= 25 V
I
V
HF
F
p
160
1.6
R
= 0.3 ms
= 30 mA
= 50 mV
= 25 V
R
, R
p
j
/T = 0.01,
= 150 °C
L
200
2.0
R
R
= 100 Ω
= 6 V,
= 1 mA
Symbol
V
C
V
I
I
(BR)
t
t
R
R
rr
rr
F
D
94 9156
Figure 3. Diode Capacitance vs. Reverse Voltage
3.0
2.5
2.0
1.5
1.0
0.5
0
DiodesEurope@vishay.com
0.1
Min.
35
V
R
- Reverse Voltage (V)
1
Typ.
f = 1 MHz
T
j
= 25 °C
10
Document Number 85564
Max.
1000
100
100
4
4
2
Rev. 1.7, 15-Sep-10
100
Unit
mV
nA
μA
pF
ns
ns
V

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