1N5231B-TAP Vishay, 1N5231B-TAP Datasheet - Page 3

• Manufacturer Part Number: 1N5231B-TAP
• Description: ZENER DIODE, 500mW, 5.1V, DO-35
• Manufacturer: Vishay

Specifications of 1N5231B-TAP

• Zener Voltage Vz Typ: 5.1V
• Power Dissipation Pd: 500mW
• Diode Case Style: DO-35
• No. Of Pins: 2
• Diode Type: Zener
• Peak Reflow Compatible (260 C): Yes
• Leaded Process Compatible: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1)
Typical Characteristics
T
Document Number 85588
Rev. 1.8, 15-Sep-10
amb
Figure 2. Typical Change of Working Voltage under Operating
Based on dc-measurement at thermal equilibrium; lead length = 9.5 (3/8 "); thermal resistance of heat sink = 30 K/W
Part number
1N5265B
1N5266B
1N5267B
= 25 °C, unless otherwise specified
Figure 1. Thermal Resistance vs. Lead Length
95 9598
1000
100
500
400
300
200
100
10
0
1
0
Nominal Zener
0
Conditions at T
T
at I
voltage
j
= 25 °C
ZT
62
68
75
V
I - Lead Length (mm)
5
, V
[e-mail], [e-mail],
5
V
1)
Z
Z
For technical questions within your region, please contact one of the following:
- Z-Voltage (V)
10
T
L
amb
10
= constant
I
Z
l
Test current
= 5 mA
= 25 °C
15
mA
1.8
1.7
I
ZT
2
l
15
20
95 9611
20
25
impedance
Maximum
Z
dynamic
ZT
185
230
270
at I
ZT
1)
Z
impedance
Maximum
ZK
dynamic
0.25 mA
Figure 4. Total Power Dissipation vs. Ambient Temperature
1400
1600
1700
at I
ZK
Figure 3. Typical Change of Working Voltage vs.
95 9602
95 9599
1N5221B to 1N5267B
=
600
500
400
300
200
100
1.3
1.2
1.1
1.0
0.9
0.8
[e-mail]
0
- 60
0
temperature of
coeffizient
V
T
T
+ 0.097
+ 0.097
+ 0.098
Typical
Ztn
at I
amb
j
(%/K)
Junction Temperature
- Junction Temperature (°C)
40
= V
0
ZT
- Ambient Temperature (°C)
Zt
/V
Vishay Semiconductors
Z
80
60
(25 °C)
TK
VZ
= 10 x 10
Maximum reverse leakage
120
120
0.1
0.1
0.1
µA
I
R
-4
/K
160
180
- 2 x 10
- 4 x 10
current
8 x 10
2 x 10
6 x 10
4 x 10
0
www.vishay.com
-4
-4
-4
-4
-4
-4
/K
/K
200
240
/K
/K
/K
/K
V
47
52
56
V
R
3