BZT03C200-TR Vishay, BZT03C200-TR Datasheet
BZT03C200-TR
Specifications of BZT03C200-TR
Related parts for BZT03C200-TR
BZT03C200-TR Summary of contents
Page 1
... Rev. 4, 10-Sep-03 Test condition Symbol = 25 ° ZRM = 25 ° ZSM stg Symbol R thJA R thJA Test condition Symbol V F BZT03..Series Vishay Semiconductors 949539 Value Unit 3. 600 W 175 ° 175 °C Value Unit 46 K/W 100 K/W Min Typ. Max 1.2 www.vishay.com Unit V ...
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... BZT03C130 124 130 141 BZT03C150 138 150 156 BZT03C160 153 160 171 BZT03C180 168 180 191 BZT03C200 188 200 212 BZT03C220 208 220 233 BZT03C240 228 240 256 BZT03C270 251 270 289 1) 10/1000 exp. falling pulse tp = 1000 µs down ...
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... BZT03..Series Vishay Semiconductors Reverse Clamping Stand-off Leakage Current (CL RMS µA µ max max max 1500 4.4 9.5 34 ...
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... BZT03..Series Vishay Semiconductors Typical Characteristics ( Figure 1. Epoxy glass hard tissue, board thickness 1.5 mm, ≤100 K/W R thJA 4 l l=10mm 3 15mm T =constant L 2 20mm 1 see Fig 120 160 T – Ambient T emperature ( ° 9584 amb Figure 2. Total Power Dissipation vs. Ambient Temperature Package Dimensions in mm ...
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... Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 ...