VRF141G MICROSEMI, VRF141G Datasheet - Page 4
![no-image](/images/manufacturer_photos/0/4/443/microsemi_sml.jpg)
VRF141G
Manufacturer Part Number
VRF141G
Description
RF FET, 80V
Manufacturer
MICROSEMI
Datasheet
1.VRF141G.pdf
(4 pages)
Specifications of VRF141G
Drain Source Voltage Vds
80V
Continuous Drain Current Id
40A
Power Dissipation Pd
500W
No. Of Pins
5
Transistor Type
RF MOSFET
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. US and Foreign patents pending. All Rights Reserved.
Pin 1. Drain
2. Drain
3. Gate
4. Gate
5. Source
.060
0.400
0.200
.107
Package Dimensions (inches)
All Dimensions are ± .005
.225
1
3
.860
1.100
.435
1.340
2
4
5
.065 rad 2 PL
.210
0.390
.005
HAZARDOUS MATERIAL
The ceramic portion of the device
between leads and mounting
flange is beryllium oxide.
Beryllium oxide dust is highly
toxic when inhaled. Care must
be taken during handling and
mounting to avoid damage to this
area. These devices must never
be thrown away with general
industrial or domestic waste.
WARNING
VRF141G