SKIM609GAL12E4 SEMIKRON, SKIM609GAL12E4 Datasheet

IGBT Module

SKIM609GAL12E4

Manufacturer Part Number
SKIM609GAL12E4
Description
IGBT Module
Manufacturer
SEMIKRON
Datasheet

Specifications of SKIM609GAL12E4

Dc Collector Current
748A
Collector Emitter Voltage Vces
1.2kV
Collector Emitter Voltage V(br)ceo
800mV
No. Of Pins
32
Package / Case
SKiM 93
Family/system
SKiM 63\/93
Voltage (v)
1200
Current (a)
600
Chip-type
IGBT 4 (Trench)
Case
SKIM 93
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
SKiM609GAL12E4
Trench IGBT Modules
SKiM609GAL12E4
Target Data
Features
• IGBT 4 Trench Gate Technology
• Solderless sinter technology
• V
• Low inductance case
• Isolated by Al
• Pressure contact technology
• High short circuit capability, self
• Integrated temperature sensor
Typical Applications
• Automotive inverter
• High reliability AC inverter wind
• High reliability AC inverter drives
© by SEMIKRON
SKiM
coefficient
Bonded) ceramic substrate
forthermal contacts and
electricalcontacts
limiting to 6 x I
CE(sat)
with positive temperature
®
93
2
O
C
GAL
3
DCB (Direct Copper
Absolute Maximum Ratings
Symbol
IGBT
V
I
I
I
V
t
T
Inverse diode
I
I
I
I
T
Freewheeling diode
I
I
I
I
T
Module
I
T
V
Characteristics
Symbol
IGBT
V
V
r
V
I
C
C
C
Q
R
C
Cnom
CRM
psc
F
Fnom
FRM
FSM
F
Fnom
FRM
FSM
t(RMS)
CE
CES
j
j
j
stg
CES
GES
isol
CE(sat)
CE0
GE(th)
ies
oes
res
Gint
G
Rev. 2 – 26.08.2009
T
V
V
V
T
t
T
t
I
V
chiplevel
V
V
V
V
V
V
T
Conditions
I
I
I
AC sinus 50 Hz, t = 1 min
Conditions
V
p
p
C
CRM
FRM
FRM
j
j
j
j
CC
GE
CES
GE
GE
GE
CE
CE
GE
GE
GE
= 10 ms, sin 180°, T
= 10 ms, sin 180°, T
= 175 °C
= 175 °C
= 175 °C
= 600 A
= 25 °C
=V
= 1200 V
= 25 V
= 800 V
≤ 15 V
= 15 V
= 15 V
= 0 V
= 0 V
= - 8 V...+ 15 V
= 3xI
= 3xI
= 3xI
≤ 1200 V
CE
, I
Fnom
Fnom
Cnom
C
= 24 mA
T
T
T
T
T
T
T
T
T
T
T
T
T
T
f = 1 MHz
f = 1 MHz
f = 1 MHz
s
s
j
s
s
s
s
j
j
j
j
j
j
j
= 150 °C
j
j
= 25 °C
= 150 °C
= 25 °C
= 150 °C
= 25 °C
= 150 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
min.
5
-40 ... 175
-40 ... 175
-40 ... 175
-40 ... 125
-20 ... 20
Values
1200
1800
1397
1107
1350
4050
6480
2500
3400
typ.
1.85
2.25
35.2
2.32
1.88
748
608
600
139
110
150
450
900
700
0.8
0.7
1.8
2.6
5.8
0.1
1.3
10
max.
2.10
2.45
0.9
0.8
2.0
2.8
6.5
0.3
Unit
Unit
mΩ
mΩ
mA
mA
nC
°C
°C
°C
°C
nF
nF
nF
µs
V
A
A
A
A
V
A
A
A
A
A
A
A
A
A
A
A
V
V
V
V
V
V
1

Related parts for SKIM609GAL12E4

SKIM609GAL12E4 Summary of contents

Page 1

... SKiM609GAL12E4 ® SKiM 93 Trench IGBT Modules SKiM609GAL12E4 Target Data Features • IGBT 4 Trench Gate Technology • Solderless sinter technology • V with positive temperature CE(sat) coefficient • Low inductance case • Isolated DCB (Direct Copper 2 3 Bonded) ceramic substrate • Pressure contact technology ...

Page 2

... SKiM609GAL12E4 ® SKiM 93 Trench IGBT Modules SKiM609GAL12E4 Target Data Features • IGBT 4 Trench Gate Technology • Solderless sinter technology • V with positive temperature CE(sat) coefficient • Low inductance case • Isolated DCB (Direct Copper 2 3 Bonded) ceramic substrate • Pressure contact technology ...

Page 3

... SKiM609GAL12E4 Fig. 1: Typ. output characteristic, inclusive R Fig. 3: Typ. turn-on /-off energy = f (I Fig. 5: Typ. transfer characteristic © by SEMIKRON Fig. 2: Rated current vs. temperature I CC'+ EE' ) Fig. 4: Typ. turn-on /-off energy = Fig. 6: Typ. gate charge characteristic Rev. 2 – 26.08.2009 = ...

Page 4

... SKiM609GAL12E4 Fig. 7: Typ. switching times vs. I Fig. 9: Typ. transient thermal impedance Fig. 11: Typ. CAL diode peak reverse recovery current 4 Fig. 8: Typ. switching times vs. gate resistor R C Fig. 10: Typ. CAL diode forward charact., incl. R Fig. 12: Typ. CAL diode recovery charge Rev. 2 – 26.08.2009 ...

Page 5

... SKiM609GAL12E4 SKIM® 93 GAL This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. © by SEMIKRON Rev. 2 – 26.08.2009 5 ...

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