SKM 150GB123D SEMIKRON, SKM 150GB123D Datasheet

IGBT MODULE, 1.2KV, 150A, SEMITRANS 3

SKM 150GB123D

Manufacturer Part Number
SKM 150GB123D
Description
IGBT MODULE, 1.2KV, 150A, SEMITRANS 3
Manufacturer
SEMIKRON
Datasheet

Specifications of SKM 150GB123D

Transistor Polarity
N Channel
Dc Collector Current
150A
Collector Emitter Voltage Vces
1.2kV
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Range
-40°C To +150°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
SKM 150GB123D
IGBT Modules
SKM 150GB123D
SKM 150GAL123D
Features
Typical Applications*
1
SEMITRANS
GB
GAL
®
3
Absolute Maximum Ratings
Symbol
IGBT
Inverse Diode
Freewheeling Diode
Module
Characteristics
Symbol
IGBT
11-09-2006 RAA
Conditions
Conditions
min.
Values
typ.
© by SEMIKRON
max.
Units
Units

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SKM 150GB123D Summary of contents

Page 1

... SKM 150GB123D ® SEMITRANS 3 IGBT Modules SKM 150GB123D SKM 150GAL123D Features Typical Applications* GB GAL 1 Absolute Maximum Ratings Symbol Conditions IGBT Inverse Diode Freewheeling Diode Module Characteristics Symbol Conditions IGBT 11-09-2006 RAA Values Units min. typ. max. Units © by SEMIKRON ...

Page 2

... SKM 150GB123D ® SEMITRANS 3 IGBT Modules SKM 150GB123D SKM 150GAL123D Features Typical Applications* GB GAL 2 Characteristics Symbol Conditions Inverse Diode Freewheeling Diode Module This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. * The specifications of our components may not be considered as an assurance of component characteristics ...

Page 3

... SKM 150GB123D ® SEMITRANS 3 IGBT Modules SKM 150GB123D SKM 150GAL123D Features Typical Applications* GB GAL Symbol Conditions Z th(j-c)l Z th(j-c)D 11-09-2006 RAA Values Units © by SEMIKRON ...

Page 4

... SKM 150GB123D Fig. 1 Typ. output characteristic, inclusive R Fig. 3 Typ. turn-on /-off energy = Fig. 5 Typ. transfer characteristic 4 Fig. 2 Rated current vs. temperature I CC'+ EE' Fig. 4 Typ. turn-on /-off energy = f (R Fig. 6 Typ. gate charge characteristic 11-09-2006 RAA = © by SEMIKRON ...

Page 5

... SKM 150GB123D Fig. 7 Typ. switching times vs Fig. 9 Transient thermal impedance of IGBT thp(j- Fig. 11 CAL diode forward characteristic 5 Fig. 8 Typ. switching times vs. gate resistor R Fig. 10 Transient thermal impedance of FWD thp(j- Fig. 12 Typ. CAL diode peak reverse recovery current 11-09-2006 RAA © by SEMIKRON ...

Page 6

... SKM 150GB123D UL Recognized 6 11-09-2006 RAA File no. E63 532 © by SEMIKRON ...

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