SKM 100 GB 125 DN SEMIKRON, SKM 100 GB 125 DN Datasheet - Page 2

• Manufacturer Part Number: SKM 100 GB 125 DN
• Description: IGBT MODULE, 1.2KV, 100A, SEMITRANS 2N
• Manufacturer: SEMIKRON

Specifications of SKM 100 GB 125 DN

• Transistor Polarity: N Channel
• Dc Collector Current: 100A
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Thermal Resistance: 0.18°C/W
• Continuous Collector Current Ic: 100A
• Collector Emitter Saturation Voltage Vce(sat): 3.3V
• Continuous Collector Current @ 25 C: 100A
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SKM 100GB125DN
Ultra Fast IGBT Module
SKM 100GB125DN
Features
Typical Applications*
2
SEMITRANS
GB
®
2N
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
* The specifications of our components may not be considered as an assurance of
component characteristics. Components have to be tested for the respective
application. Adjustments may be necessary. The use of SEMIKRON products in
life support appliances and systems is subject to prior specification and written
approval by SEMIKRON. We therefore strongly recommend prior consultation of
our personal.
Characteristics
Symbol
Inverse Diode
Module
21-05-2007 RAA
Conditions
min.
typ.
© by SEMIKRON
max.
Units