2N4117A-E3 Vishay, 2N4117A-E3 Datasheet - Page 3

• Manufacturer Part Number: 2N4117A-E3
• Description: N CHANNEL JFET, -70V, TO-206AF
• Manufacturer: Vishay

Specifications of 2N4117A-E3

• Breakdown Voltage Vbr: -70V
• Gate-source Cutoff Voltage Vgs(off) Max: -1.8V
• Power Dissipation Pd: 300mW
• Operating Temperature Range: -55°C To +175°C
• No. Of Pins: 3
• Leaded Process Compatible: Yes
• Configuration: Single
• Transistor Polarity: N-Channel
• Power Dissipation: 300 mW
• Package / Case: TO-206AF
• Gate-source Breakdown Voltage: - 40 V
• Maximum Operating Temperature: + 175 C
• Maximum Drain Gate Voltage: - 40 V
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS (T
Document Number: 70239
S-41231—Rev. G, 28-Jun-04
1000
800
600
400
200
100
15
12
80
60
40
20
0
9
6
3
0
0
0
0
0
On-Resistance and Output Conductance
I
g
f = 1 kHz
DSS
fs
Drain Current and Transconductance
V
@ V
V
V
@ V
GS(off)
vs. Gate-Source Cutoff Voltage
GS(off)
vs. Gate-Source Cutoff Voltage
GS(off)
−1
−1
4
r
DS
DS
g
V
DS
fs
Output Characteristics
DS
= 10 V, V
= −0.7 V
− Gate-Source Cutoff Voltage (V)
− Gate-Source Cutoff Voltage (V)
= 10 V, V
− Drain-Source Voltage (V)
r
g
f = 1 kHz
DS
os
−2
−2
8
@ I
@ V
GS
GS
= 0 V
D
= 0 V
DS
= 10 mA, V
= 10 V, V
−3
−3
12
g
I
DSS
os
GS
GS
= 0 V
= 0 V
V
−4
16
−4
GS
A
−0.1 V
−0.2 V
−0.3 V
−0.4 V
−0.5 V
= 0 V
= 25_C UNLESS OTHERWISE NOTED)
−5
20
−5
300
240
180
120
60
0
5
4
3
2
1
0
100 pA
0.1 pA
10 pA
1 nA
1 pA
200
160
120
500
400
300
200
100
80
40
0
0
0.01
0
0
Common-Source Forward Transconductance
V
V
GS(off)
GS(off)
2N/PN/SST4117A Series
T
V
A
GS(off)
T
= −55_C
T
4
A
6
= −2.5 V
A
= −2.5 V
V
= 125_C
V
= 25_C
DS
Output Characteristics
Gate Leakage Current
= −2.5 V
DG
I
− Drain-Source Voltage (V)
D
vs. Drain Current
− Drain-Gate Voltage (V)
− Drain Current (mA)
125_C
12
8
I
GSS
0.1
10 mA
@ 25_C
Vishay Siliconix
25_C
18
12
10 mA
V
f = 1 kHz
I
GSS
DS
100 mA
V
= 10 V
100 mA
@ 125_C
GS
16
24
−1.0 V
−1.5 V
−2.0 V
−0.5 V
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= 0 V
30
20
1
3