SST201-T1-E3 Vishay, SST201-T1-E3 Datasheet - Page 5

• Manufacturer Part Number: SST201-T1-E3
• Description: N CHANNEL JFET, -40V, TO-236
• Manufacturer: Vishay

Specifications of SST201-T1-E3

• Breakdown Voltage Vbr: -40V
• Gate-source Cutoff Voltage Vgs(off) Max: -1.5V
• Power Dissipation Pd: 350mW
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 3
• Peak Reflow Compatible (260 C): Yes
• Continuous Drain Current Id: 200µA
• Rohs Compliant: Yes
• Transistor Type: JFET
• Zero Gate Voltage Drain Current Idss: 200µA To 1mA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document Number: 70233
S-40393—Rev. G, 15-Mar-04
TYPICAL CHARACTERISTICS (T
300
240
180
120
10
2.4
1.8
0.8
0.4
60
8
6
4
2
0
3
0
0
0
0
0.01
f = 1 MHz
10 V
V
Output Conductance vs. Drain Current
V
V
Common-Source Input Capacitance
GS(off)
GS(off)
DS
−4
= 0 V
0.1
= −0.7 V
V
V
vs. Gate-Source Voltage
= −1.5 V
GS
DS
Output Characteristics
− Gate-Source Voltage (V)
I
− Drain-Source Voltage (V)
D
− Drain Current (mA)
−8
0.2
−0.5
0.1
25_C
−12
0.3
T
A
V
f = 1 kHz
= −55_C
125_C
DS
= 10 V
V
−16
GS
A
0.4
= 0 V
= 25_C UNLESS OTHERWISE NOTED)
−0.1
−0.2
−0.3
−0.4
−20
0.5
1
1.0
0.8
0.6
0.4
0.2
20
16
12
8
4
0
0
5
4
3
2
1
0
Common-Source Reverse Feedback Capacitance
10
0
Equivalent Input Noise Voltage vs. Frequency
0
V
V
f = 1 MHz
DS
V
GS(off)
DS
= 10 V
V
0.2
= 0 V
−4
GS
100
= −1.5 V
V
V
vs. Gate-Source Voltage
= 0 V
DS
Output Characteristics
GS
I
− Drain-Source Voltage (V)
D
V
− Gate-Source Voltage (V)
J/SST201 Series
10 V
@ 100 mA
f − Frequency (Hz)
GS
0.4
−8
= 0 V
Vishay Siliconix
1 k
−0.3
−0.6
−0.9
−1.2
0.6
−12
10 k
www.vishay.com
−16
0.8
100 k
1.0
−20
5