2N4858A Vishay, 2N4858A Datasheet - Page 2
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2N4858A
Manufacturer Part Number
2N4858A
Description
Transistor
Manufacturer
Vishay
Datasheet
1.2N4857A.pdf
(5 pages)
Specifications of 2N4858A
Breakdown Voltage Vbr
-40V
Gate-source Cutoff Voltage Vgs(off) Max
-4V
Continuous Drain Current Id
8mA
Gate-source Breakdown Voltage
-40V
Mounting Type
Through Hole
Zero Gate Voltage Drain Current Idss Min
8mA
Current Rating
50mA
Gate-source Cutoff Voltage
-4V
Rohs Compliant
No
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2N4858A
Manufacturer:
SILICONIX
Quantity:
20 000
2N4856A/4857A/4858A
Vishay Siliconix
Gate-Drain, Gate-Source Voltage : (2N4856A-58A)
Gate Current
Lead Temperature (
Storage Temperature
Notes
a.
b.
c.
www.vishay.com
7-2
Static
Gate-Source
Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain Current
Gate Reverse Current
Gate Operating Current
Drain Cutoff Current
Drain-Source On-Voltage
Drain-Source On-Resistance
Gate-Source Forward Voltage
Dynamic
Common-Source
Forward Transconductance
Common-Source
Output Conductance
Drain-Source On-Resistance
Common-Source
Input Capacitance
Common-Source
Reverse Transfer Capacitance
Equivalent Input
Noise Voltage
Switching
Turn-On Time
Turn-Off Time
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
Pulse test: PW v100 ms duty cycle v10%.
This parameter not registered with JEDEC.
Parameter
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
c
1
/
16
c
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
” from case for 10 seconds)
c
b
c
c
c
Symbol
V
V
V
r
V
(BR)GSS
r
I
DS(on)
t
GS(off)
I
I
DS(on)
ds(on)
C
t
D(off)
C
d(on)
GSS
GS(F)
DSS
g
OFF
g
e
I
t
_
G
os
iss
rss
fs
n
r
. . . . . . . . . . . . . . .
. . . . . . . . . . . . . .
V
GS
V
V
V
V
V
V
V
V
–65 to 200_C
I
V
V
V
Test Conditions
DS
I
V
G
See Switching Circuit
See Switching Circuit
GS
V
DS
DS
DD
DS
DG
G
DS
= 0 V
DS
DS
DS
GS
GS
= –1 mA , V
= 1 mA , V
= 15 V, V
= –20 V, V
= 0 V, V
= 0 V, V
= 10 V, V
= 15 V, I
= 15 V, I
= 10 V, I
= 15 V, V
= 20 V, I
= 20 V, I
= 0 V, I
= 0 V, I
300 _C
f = 1 MHz
50 mA
f = 1 kHz
f = 1 kHz
f = 1 kHz
–40 V
GS
GS
D
D
D
D
GS
D
D
D
GSH
DS
DS
GS
= 0 mA
= 0.5 nA
DS
= 10 mA
= 1 mA
= 10 mA
= 1 mA
= 1 mA
= –10 V
= –10 V
= –10 V
T
T
I
I
= 0 V
= 0 V
I
D
D
= 0 V
A
A
D
= 0 V
= 0 V
= 10 mA
= 20 mA
= 150_C
= 150_C
= 5 mA
Operating Junction Temperature
Power Dissipation
Notes
a.
Derate 10 mW/_C for T
Typ
0.25
0.35
–55
–13
0.5
0.7
–5
–5
13
25
12
5
6
7
3
3
2
2
a
a
Min
–40
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–4
50
2N4856A
C
Max
–250
–500
0.75
–10
250
500
25
25
10
20
> 25_C
4
5
3
. . . . . . . . . . . . . . . . . . . . . . . . . .
Min
–40
–2
20
2N4857A
Limits
Max
–250
–500
100
250
500
0.5
3.5
–6
40
40
10
40
6
4
S-04028—Rev. D, 04-Jun-01
Document Number: 70243
Min
–0.8
–40
8
2N4858A
Max Unit
–250
–500
–55 to 200_C
250
500
0.5
3.5
–4
80
60
60
10
80
8
8
1.8 W
mA
mS
nV
pA
nA
pA
nA
mS
pF
ns
W
W
V
V
V
V
Hz
NCB