2N5116 Vishay, 2N5116 Datasheet - Page 5
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2N5116
Manufacturer Part Number
2N5116
Description
Transistor
Manufacturer
Vishay
Specifications of 2N5116
Breakdown Voltage Vbr
30V
Gate-source Cutoff Voltage Vgs(off) Max
4V
Continuous Drain Current Id
-25mA
Gate-source Breakdown Voltage
30V
Mounting Type
Through Hole
Zero Gate Voltage Drain Current Idss Min
-5mA
Channel Type
P
Configuration
Single
Gate-source Voltage (max)
30V
Drain-gate Voltage (max)
30V
Operating Temperature (min)
-55C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3
Current Rating
-50mA
Gate-source Cutoff Voltage
4V
Rohs Compliant
No
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2N5116
Manufacturer:
ST/MOTO
Quantity:
20 000
Document Number: 70260
S-04030—Rev. E, 04-Jun-01
V
V
R
R
I
V
V
*Non-inductive
Rise Time < 1 ns
Fall Time < 1 ns
Pulse Width 100 ns
PRF 1 MHz
See Typical Characteristics curves for changes.
D(on)
DD
GG
L
G
GS(H)
GS(L)
*
*
–10
–80
–64
–48
–32
–16
INPUT PULSE
–8
–6
–4
–2
0
0
0
0
V
V
GS(off)
GS(off)
2N5114
–15 mA
–10 V
430 W
100 W
–11 V
20 V
= 1.5 V
= 5 V
0 V
0.2
1
125_C
T
V
V
Transfer Characteristics
Transfer Characteristics
A
GS
GS
= –55_C
T
125_C
A
– Gate-Source Voltage (V)
– Gate-Source Voltage (V)
= –55_C
0.4
2
25_C
2N5115
Rise Time 0.4 ns
Input Resistance 10 MW
Input Capacitance 1.5 pF
–7 mA
910 W
220 W
–6 V
12 V
–7 V
SAMPLING SCOPE
0 V
25_C
0.6
3
V
DS
V
DS
= –15 V
= –15 V
2N5116
0.8
–3 mA
390 W
4
–6 V
2 kW
–5 V
8 V
0 V
_
1.0
5
V
V
GS(H)
GS(L)
100
–40
–32
–16
–24
–8
10
0
1
10
0
51 W
V
0.1 mF
GS(off)
V
T
DS
A
125_C
= –55_C
= –10 V
V
= 3 V
1
Noise Voltage vs. Frequency
GG
100
V
Transfer Characteristics
GS
25_C
1.2 kW
1.2 kW
51 W
R
– Gate-Source Voltage (V)
–1 mA
G
f – Frequency (Hz)
2N5114/5115/5116
I
D
2
= –0.1 mA
Sampling
Scope
1 k
Vishay Siliconix
–V
3
DD
V
DS
R
L
10 k
= –15 V
4
www.vishay.com
7.5 kW
51 W
100 k
5
9-5