2N5116 Vishay, 2N5116 Datasheet - Page 3

• Manufacturer Part Number: 2N5116
• Description: Transistor
• Manufacturer: Vishay

Specifications of 2N5116

• Breakdown Voltage Vbr: 30V
• Gate-source Cutoff Voltage Vgs(off) Max: 4V
• Continuous Drain Current Id: -25mA
• Gate-source Breakdown Voltage: 30V
• Mounting Type: Through Hole
• Zero Gate Voltage Drain Current Idss Min: -5mA
• Channel Type: P
• Configuration: Single
• Gate-source Voltage (max): 30V
• Drain-gate Voltage (max): 30V
• Operating Temperature (min): -55C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3
• Current Rating: -50mA
• Gate-source Cutoff Voltage: 4V
• Rohs Compliant: No
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Document Number: 70261
S-04030—Rev. E, 04-Jun-01
V
V
R
R
I
V
V
*Non-inductive
Rise Time < 1 ns
Fall Time < 1 ns
Pulse Width 100 ns
PRF 1 MHz
See Typical Characteristics curves for changes.
D(on)
DD
GG
L
G
GS(H)
GS(L)
*
*
INPUT PULSE
2N5114
–15 mA
–10 V
430 W
100 W
–11 V
20 V
0 V
2N5115
Rise Time 0.4 ns
Input Resistance 10 MW
Input Capacitance 1.5 pF
–7 mA
910 W
220 W
–6 V
12 V
–7 V
SAMPLING SCOPE
0 V
2N5116
2000 W
–3 mA
390 W
–6 V
–5 V
8 V
0 V
2N5114JAN/JANTX/JANTXV Series
V
V
GS(H)
GS(L)
51 W
0.1 mF
V
GG
1.2 kW
1.2 kW
51 W
R
G
Sampling
Scope
Vishay Siliconix
–V
DD
R
L
www.vishay.com
7.5 kW
51 W
9-3