SI4532ADY-T1-GE3 Vishay, SI4532ADY-T1-GE3 Datasheet - Page 7

• Manufacturer Part Number: SI4532ADY-T1-GE3
• Description: DUAL N/P CH MOSFET
• Manufacturer: Vishay

Specifications of SI4532ADY-T1-GE3

• Module Configuration: Dual
• Transistor Polarity: N And P Channel
• Continuous Drain Current Id: 3.7A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 44mohm
• Rds(on) Test Voltage Vgs: 10V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71133.
Document Number: 71133
S09-0393-Rev. C, 09-Mar-09
0.01
0.01
0.1
0.1
2
1
2
1
10
10
-4
-4
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
0.02
Duty Cycle = 0.5
Single Pulse
10
-3
Single Pulse
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
10
0.05
-2
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
-2
10
-1
10
1
-1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
t
1
A
1
= P
Vishay Siliconix
t
2
DM
Si4532ADY
Z
thJA
thJA
100
t
t
1
2
(t)
= 87 °C/W
www.vishay.com
600
10
7