ZXMD63C02X Diodes Inc, ZXMD63C02X Datasheet - Page 2

• Manufacturer Part Number: ZXMD63C02X
• Description: MOSFET, N & P CH, DUAL, 30V, 2.4A, MSOP-8
• Manufacturer: Diodes Inc

Specifications of ZXMD63C02X

• Module Configuration: Dual
• Transistor Polarity: N And P Channel
• Continuous Drain Current Id: 2.4A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 130mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ZXMD63C02X
ABSOLUTE MAXIMUM RATINGS.
THERMAL RESISTANCE
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 10 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
(d) For device with one active die.
(e) For device with two active die running at equal power.
PROVISIONAL ISSUE A - JUNE 1999
PARAMETER
Drain-Source Voltage
Gate- Source Voltage
Continuous Drain Current (V
Pulsed Drain Current (c)(d)
Continuous Source Current (Body Diode)(b)(d)
Power Dissipation at T
Linear Derating Factor
Power Dissipation at T
Linear Derating Factor
Power Dissipation at T
Linear Derating Factor
Operating and Storage Temperature Range
PARAMETER
Junction to Ambient (a)(d)
Junction to Ambient (b)(d)
Junction to Ambient (a)(e)
Pulsed Source Current (Body Diode)(c)(d)
A
A
A
=25°C (a)(d)
=25°C (a)(e)
=25°C (b)(d)
(V
GS
GS
=4.5V; T
=4.5V; T
A
A
=25°C)(b)(d)
=70°C)(b)(d)
SYMBOL
R
R
R
2
SYMBOL
V
V
I
I
I
I
P
P
P
T
JA
JA
JA
D
DM
S
SM
DSS
GS
D
D
D
j
:T
stg
N-CHANNEL
-1.5
2.4
1.9
20
19
19
-55 to +150
VALUE
143
100
120
0.87
1.04
1.25
6.9
8.3
10
12
P-CHANNEL
-1.35
-1.7
-9.6
-1.4
-9.6
-20
UNIT
°C/W
°C/W
°C/W
mW/°C
mW/°C
mW/°C
UNIT
°C
W
W
W
V
V
A
A
A
A