IRFG9110 International Rectifier, IRFG9110 Datasheet - Page 2

• Manufacturer Part Number: IRFG9110
• Description: P CHANNEL MOSFET, -100V, MO-036AB
• Manufacturer: International Rectifier

Specifications of IRFG9110

• Module Configuration: Quad
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -750mA
• Drain Source Voltage Vds: -100V
• On Resistance Rds(on): 1.4ohm
• Rds(on) Test Voltage Vgs: -10V
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Source-Drain Diode Ratings and Characteristics
Thermal Resistance
Electrical Characteristics
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
IRFG9110
R thJC
R thJA
BV DSS
R DS(on)
V GS(th)
g fs
I DSS
I GSS
I GSS
Q g
Q gs
Q gd
t d
t r
t d
t f
L S + L D
C iss
C oss
C rss
I S
I SM
V SD
t rr
Q RR Reverse Recovery Charge
t on
BV DSS / T J Temperature Coefficient of Breakdown
2
(on)
(off)
Parameter
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Forward Turn-On Time
Parameter
Junction-to-Case
Junction to Ambient
Parameter
Drain-to-Source Breakdown Voltage
Voltage
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L S + L D .
@ Tj = 25°C (Unless Otherwise Specified)
Min Typ Max Units
—
—
Min Typ Max Units
—
—
—
—
—
-100
Min
-2.0
0.67
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
-0.098
Typ Max Units
200
85
17
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
10
30
—
90
-0.75
-3.0
-5.5
200
9.0
-250
-100
1.73
-4.0
°C/W
100
-25
7.0
8.0
15
30
60
40
40
—
—
—
1.4
—
—
—
nS
µc
A
V
S ( )
V/°C
nH
nA
ns
nC
pF
V
V
A
T j = 25°C, I F = -0.75A, di/dt -100A/ s
T
j
Measured from drain lead (6mm/
0.25in. from package) to source lead
(6mm/0.25in. from package)
= 25°C, I S = -0.75A, V GS = 0V
Reference to 25°C, I D = -1.0mA
Typical socket mount
V DS > -15V, I DS = -0.5A
V GS = -10V, I D = -0.5A
V GS = -10V, I D = -0.75A
V GS = -10V, ID = -0.75A
V DS = V GS , I D = -250µA
V GS = 0V, T J = 125°C
Test Conditions
Test Conditions
V GS = 0V, I D = -1.0mA
V DD = -50V, I D = -0.75A
V GS = -10V, R G =7.5
V GS = 0V, V DS = -25V
V DS = -80V, V GS = 0V
V DD
Test Conditions
V DS = -80V
V GS = -20V
V DS = -50V
f = 1.0MHz
V GS =20V
-50V
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