SI3552DV-T1 Vishay, SI3552DV-T1 Datasheet

Page 1

... Document Number: 71514 S-52634Rev. C, 02-Jan-06 SPICE Device Model Si3552DV • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range • Model the Gate Charge, Transient, and Diode Reverse Recovery ...

Page 2

... SPICE Device Model Si3552DV Vishay Siliconix SPECIFICATIONS (T = 25°C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time ...

Page 3

... COMPARISON OF MODEL WITH MEASURED DATA (T N-Channel MOSFET Document Number: 71514 S-52634Rev. C, 02-Jan-06 SPICE Device Model Si3552DV Vishay Siliconix =25°C UNLESS OTHERWISE NOTED) J www.vishay.com 3 ...

Page 4

... SPICE Device Model Si3552DV Vishay Siliconix P-Channel MOSFET www.vishay.com 4 Document Number: 71514 S-52634Rev. C, 02-Jan-06 ...

Page 5

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...