IRF710PBF Vishay, IRF710PBF Datasheet - Page 4

• Manufacturer Part Number: IRF710PBF
• Description: N CHANNEL MOSFET, 400V, 2A, TO-220
• Manufacturer: Vishay

Specifications of IRF710PBF

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 2A
• Drain Source Voltage Vds: 400V
• On Resistance Rds(on): 3.6ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.6 Ohm @ 1.2A, 10V
• Drain To Source Voltage (vdss): 400V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 10V
• Input Capacitance (ciss) @ Vds: 170pF @ 25V
• Power - Max: 36W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 3.6 Ohm @ 10 V
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2 A
• Power Dissipation: 36000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRF710PBF

IRF710, SiHF710
Vishay Siliconix
www.vishay.com
4
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
91041_05
91041_06
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
400
300
200
100
20
16
12
0
8
4
0
10
0
I
0
D
= 2.0 A
V
DS ,
2
Q
G
Drain-to-Source Voltage (V)
V
, Total Gate Charge (nC)
DS
4
= 80 V
V
V
C
C
C
DS
GS
iss
rss
oss
= 200 V
= 0 V, f = 1 MHz
= C
6
= C
= C
C
C
C
iss
oss
rss
10
gs
gd
V
ds
DS
1
+ C
+ C
= 320 V
8
gd
gd
For test circuit
see figure 13
, C
ds
This datasheet is subject to change without notice.
10
Shorted
12
91041_08
91041_07
Fig. 7 - Typical Source-Drain Diode Forward Voltage
10
10
10
0.1
10
-1
2
1
0
5
2
5
2
5
2
0.4
1
Fig. 8 - Maximum Safe Operating Area
150
2
V
°
V
C
DS
SD
0.6
Operation in this area limited
5
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
10
T
T
Single Pulse
0.8
C
J
by R
25
= 150 °C
= 25 °C
2
°
C
DS(on)
5
S11-0508-Rev. B, 21-Mar-11
www.vishay.com/doc?91000
1.0
Document Number: 91041
10
2
2
1.2
V
GS
= 0 V
1
100
10
5
ms
ms
10
µs
1.4
3