IRF820PBF Vishay, IRF820PBF Datasheet - Page 3
![N CHANNEL MOSFET, 500V, 2.5A TO-220](/photos/5/29/52977/698-to-220ab_sml.jpg)
IRF820PBF
Manufacturer Part Number
IRF820PBF
Description
N CHANNEL MOSFET, 500V, 2.5A TO-220
Manufacturer
Vishay
Specifications of IRF820PBF
Transistor Polarity
N Channel
Continuous Drain Current Id
2.5A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
3ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3 Ohm @ 1.5A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
2.5A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
24nC @ 10V
Input Capacitance (ciss) @ Vds
360pF @ 25V
Power - Max
50W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
3 Ohm @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
2.5 A
Power Dissipation
50000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRF820PBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF820PBF
Manufacturer:
FSC
Quantity:
50 000
Part Number:
IRF820PBF
Manufacturer:
VISHAY/威世
Quantity:
20 000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 91059
S11-0507-Rev. C, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
91059_01
91059_02
10
10
10
10
Fig. 2 - Typical Output Characteristics, T
Fig. 1 - Typical Output Characteristics, T
-1
-1
0
0
10
10
Top
Bottom
Top
Bottom
0
0
V
V
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
DS
DS ,
V
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
V
GS
, Drain-to-Source Voltage (V)
GS
Drain-to-Source Voltage (V)
10
10
1
1
20 µs Pulse Width
T
20 µs Pulse Width
T
C
C
=
=
25 °C
150 °C
This datasheet is subject to change without notice.
4.5 V
4.5 V
C
C
= 150 °C
= 25 °C
91059_03
91059_04
Fig. 4 - Normalized On-Resistance vs. Temperature
10
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-1
0
Fig. 3 - Typical Transfer Characteristics
- 60 - 40 - 20 0
4
150
I
V
D
GS
= 2.1 A
°
= 10 V
C
V
5
T
GS ,
J ,
25
Junction Temperature (°C)
Gate-to-Source Voltage (V)
°
C
6
20 40 60 80 100 120 140 160
IRF820, SiHF820
7
www.vishay.com/doc?91000
Vishay Siliconix
20 µs Pulse Width
V
DS
8
=
50 V
9
www.vishay.com
10
3