IRF830PBF Vishay, IRF830PBF Datasheet - Page 5

• Manufacturer Part Number: IRF830PBF
• Description: N CHANNEL MOSFET, 500V, 4.5A TO-220
• Manufacturer: Vishay

Specifications of IRF830PBF

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 4.5A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 1.5ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.5 Ohm @ 2.7A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 4.5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 610pF @ 25V
• Power - Max: 74W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 1.5 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.5 A
• Power Dissipation: 74000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRF830PBF

Document Number: 91063
S11-0506-Rev. B, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
91063_09
Fig. 9 - Maximum Drain Current vs. Case Temperature
5.0
4.0
3.0
2.0
1.0
0.0
91063_11
25
10
0.1
10
T
-2
1
C
10
50
, Case Temperature (°C)
-5
0 - 0.5
0.2
0.1
0.05
0.02
0.01
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
75
10
100
-4
This datasheet is subject to change without notice.
125
Single Pulse
(Thermal Response)
10
150
t
-3
1
, Rectangular Pulse Duration (S)
10
-2
90 %
10 %
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
V
V
DS
GS
0.1
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
10 V
V
GS
t
d(on)
V
Notes:
1. Duty Factor, D = t
2. Peak T
DS
t
r
IRF830, SiHF830
1
j
= P
P
D.U.T.
DM
www.vishay.com/doc?91000
DM
R
Vishay Siliconix
D
x Z
t
d(off)
t
1
1
thJC
/t
2
t
2
+ T
t
f
+
-
C
www.vishay.com
10
V
DD
5