IRF840LCPBF Vishay, IRF840LCPBF Datasheet - Page 4

• Manufacturer Part Number: IRF840LCPBF
• Description: N CHANNEL MOSFET, 500V, 8A TO-220AB
• Manufacturer: Vishay

Specifications of IRF840LCPBF

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 8A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 850mohm
• Rds(on) Test Voltage Vgs: 10V
• Leaded Process Compatible: Yes
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 850 mOhm @ 4.8A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 39nC @ 10V
• Input Capacitance (ciss) @ Vds: 1100pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.85 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 8 A
• Power Dissipation: 125000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRF840LCPBF

IRF840LC, SiHF840LC
Vishay Siliconix
www.vishay.com
4
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
91067_05
91067_06
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
2400
1600
1200
2000
800
400
20
16
12
8
4
0
0
10
0
I
0
D
= 8.0 A
V
8
DS ,
Q
G
Drain-to-Source Voltage (V)
, Total Gate Charge (nC)
V
DS
16
= 100 V
V
V
C
C
C
DS
GS
iss
rss
oss
24
= 250 V
= C
= 0 V, f = 1 MHz
= C
= C
C
C
C
10
V
gs
gd
ds
iss
oss
rss
DS
1
+ C
+ C
32
= 400 V
gd
gd
For test circuit
see figure 13
, C
This datasheet is subject to change without notice.
ds
40
Shorted
48
91067_08
91067_07
Fig. 7 - Typical Source-Drain Diode Forward Voltage
10
10
10
0.1
10
10
1
3
0
5
2
5
2
5
2
5
2
2
1
0.6
1
Fig. 8 - Maximum Safe Operating Area
150
2
°
V
V
C
DS
SD
0.8
Operation in this area limited
, Drain-to-Source Voltage (V)
5
, Source-to-Drain Voltage (V)
25
°
10
C
T
T
Single Pulse
1.0
C
J
by R
= 150 °C
= 25 °C
2
DS(on)
5
S11-0506-Rev. B, 21-Mar-11
www.vishay.com/doc?91000
1.2
Document Number: 91067
10
2
2
1.4
V
GS
= 0 V
5
10
100
1
10
ms
10
1.6
µs
ms
µs
3