IRF840PBF Vishay, IRF840PBF Datasheet
IRF840PBF
Specifications of IRF840PBF
Available stocks
Related parts for IRF840PBF
IRF840PBF Summary of contents
Page 1
... The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance S and low package cost of the TO-220AB contribute to its N-Channel MOSFET wide acceptance throughout the industry. TO-220AB IRF840PbF SiHF840-E3 IRF840 SiHF840 = 25 °C, unless otherwise noted) C SYMBOL ° ...
Page 2
... IRF840, SiHF840 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...
Page 3
... Fig Typical Transfer Characteristics C 3.0 2.5 2.0 4.5 V 1.5 1.0 0.5 = 150 °C 0 91070_04 = 150 °C C Fig Normalized On-Resistance vs. Temperature This datasheet is subject to change without notice. IRF840, SiHF840 Vishay Siliconix ° 150 C ° µs Pulse Width Gate-to-Source Voltage ( 8.0 A ...
Page 4
... IRF840, SiHF840 Vishay Siliconix 2500 MHz iss 2000 rss oss ds C 1500 1000 C 500 C rss Drain-to-Source Voltage ( 91070_05 Fig Typical Capacitance vs. Drain-to-Source Voltage 8 400 250 100 Total Gate Charge (nC) 91070_06 G Fig Typical Gate Charge vs. Drain-to-Source Voltage www.vishay.com 4 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ...
Page 5
... THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Fig. 10a - Switching Time Test Circuit 125 150 10 % Fig. 10b - Switching Time Waveforms Single Pulse (Thermal Response 0 Rectangular Pulse Duration (S) 1 This datasheet is subject to change without notice. IRF840, SiHF840 Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0 ...
Page 6
... IRF840, SiHF840 Vishay Siliconix Vary t to obtain p required I AS D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit 91070_12c Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ...
Page 7
... for logic level device Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91070. ...
Page 8
... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...