IRF9610PBF Vishay, IRF9610PBF Datasheet - Page 6
![P CH MOSFET, -200V, 1.8A, TO-220](/photos/5/29/52977/698-to-220ab_sml.jpg)
IRF9610PBF
Manufacturer Part Number
IRF9610PBF
Description
P CH MOSFET, -200V, 1.8A, TO-220
Manufacturer
Vishay
Specifications of IRF9610PBF
Transistor Polarity
P Channel
Continuous Drain Current Id
-1.8A
Drain Source Voltage Vds
-200V
On Resistance Rds(on)
3ohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-4V
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3 Ohm @ 900mA, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
1.8A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
11nC @ 10V
Input Capacitance (ciss) @ Vds
170pF @ 25V
Power - Max
20W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
3 Ohm @ 10 V
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1.8 A
Power Dissipation
2000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRF9610PBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
IRF9610, SiHF9610
Vishay Siliconix
www.vishay.com
6
10 %
90 %
Fig. 17a - Switching Time Test Circuit
Fig. 17b - Switching Time Waveforms
V
V
GS
DS
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
- 10 V
V
GS
t
d(on)
V
DS
t
r
D.U.T.
R
D
t
d(off)
t
f
-
+
V
DD
Fig. 18a - Basic Gate Charge Waveform
15 V
12 V
V
V
Fig. 18b - Gate Charge Test Circuit
G
GS
Same type as D.U.T.
Current regulator
Q
0.2 µF
GS
- 3 mA
Current sampling resistors
50 kΩ
Charge
0.3 µF
Q
Q
GD
G
I
G
S09-0046-Rev. A, 19-Jan-09
Document Number: 91080
D.U.T.
I
D
+
-
V
DS