IRF9630PBF Vishay, IRF9630PBF Datasheet - Page 3

• Manufacturer Part Number: IRF9630PBF
• Description: P CH MOSFET, -200V, 6.5A, TO-220
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of IRF9630PBF

• Transistor Polarity: P Channel
• Continuous Drain Current Id: -6.5A
• Drain Source Voltage Vds: -200V
• On Resistance Rds(on): 800mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -4V
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 800 mOhm @ 3.9A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 6.5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 29nC @ 10V
• Input Capacitance (ciss) @ Vds: 700pF @ 25V
• Power - Max: 74W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.8 Ohm @ 10 V
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6.5 A
• Power Dissipation: 74000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.8Ohm
• Drain-source On-volt: 200V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-220AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRF9630PBF

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 91084
S11-0513-Rev. C, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
91084_01
91084_02
Fig. 2 - Typical Output Characteristics, T
Fig. 1 - Typical Output Characteristics, T
10
10
10
10
10
10
-1
-1
1
0
1
0
10
10
-1
Top
Bottom
-1
Top
Bottom
- V
- V
- 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
- 4.5 V
V
DS
DS ,
- 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
- 4.5 V
GS
V
, Drain-to-Source Voltage (V)
GS
Drain-to-Source Voltage (V)
10
10
0
0
20 µs Pulse Width
T
20 µs Pulse Width
T
C
C
=
=
This datasheet is subject to change without notice.
10
10
25 °C
150 °C
1
1
C
C
= 150 °C
- 4.5 V
- 4.5 V
= 25 °C
91084_04
91084_03
Fig. 4 - Normalized On-Resistance vs. Temperature
1.5
10
10
3.0
2.5
2.0
1.0
0.5
0.0
1
0
- 60 - 40 - 20 0
4
Fig. 3 - Typical Transfer Characteristics
I
V
D
GS
= - 6.5 A
= - 10 V
25
- V
5
T
°
GS ,
J ,
C
IRF9630, SiHF9630
Junction Temperature (°C)
Gate-to-Source Voltage (V)
6
20 40 60 80 100 120 140 160
150
7
www.vishay.com/doc?91000
Vishay Siliconix
°
C
20 µs Pulse Width
V
8
DS
= -
www.vishay.com
50 V
9
10
3