IRF9Z24PBF Vishay, IRF9Z24PBF Datasheet
IRF9Z24PBF
Specifications of IRF9Z24PBF
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IRF9Z24PBF Summary of contents
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... The TO-220AB package is universally preferred for all D commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance P-Channel MOSFET and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. TO-220AB IRF9Z24PbF SiHF9Z24-E3 IRF9Z24 SiHF9Z24 = 25 °C, unless otherwise noted) C SYMBOL ° ...
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... IRF9Z24, SiHF9Z24 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...
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... C 3.0 2.5 2.0 1.5 - 4.5 V 1.0 0.5 = 175 °C 0 100 120 140 160 180 91090_04 = 175 °C Fig Normalized On-Resistance vs. Temperature C This datasheet is subject to change without notice. IRF9Z24, SiHF9Z24 Vishay Siliconix ° ° 175 C 20 µs Pulse Width Gate-to-Source Voltage ( Fig ...
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... IRF9Z24, SiHF9Z24 Vishay Siliconix 1250 MHz iss rss gd 1000 oss ds 750 500 250 Drain-to-Source Voltage ( 91090_05 Fig Typical Capacitance vs. Drain-to-Source Voltage Total Gate Charge (nC) 91090_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ...
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... THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Fig. 10a - Switching Time Test Circuit 150 175 Fig. 10b - Switching Time Waveforms Single Pulse (Thermal Response Rectangular Pulse Duration (s) 1 This datasheet is subject to change without notice. IRF9Z24, SiHF9Z24 Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0 ...
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... IRF9Z24, SiHF9Z24 Vishay Siliconix Vary t to obtain p required I AS D.U 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit 91090_12c Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ...
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... V for logic level and - 3 V drive device Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...