IRFB11N50APBF Vishay, IRFB11N50APBF Datasheet - Page 8

• Manufacturer Part Number: IRFB11N50APBF
• Description: N CHANNEL MOSFET, 500V, 11A, TO-220
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of IRFB11N50APBF

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 11A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 520mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 520 mOhm @ 6.6A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 52nC @ 10V
• Input Capacitance (ciss) @ Vds: 1423pF @ 25V
• Power - Max: 170W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.52 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 11 A
• Power Dissipation: 170000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.52Ohm
• Drain-source On-volt: 500V
• Gate-source Voltage (max): ±30V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-220AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFB11N50APBF

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Document Number: 91094
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IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: [phone]
Notes:
Repetitive rating; pulse width limited by
I
max. junction temperature. ( See fig. 11 )
R
T
Starting T
SD
J
G
≤ 150°C
≤ 11A, di/dt ≤ 140A/µs, V
= 25Ω, I
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH
15.24 (.600)
14.84 (.584)
14.09 (.555)
13.47 (.530)
E XAMPLE :
J
2.87 (.113)
2.62 (.103)
= 25°C, L = 4.5mH
AS
3X
2.54 (.100)
= 11A. (See Figure 12)
1.40 (.055)
1.15 (.045)
2X
T H IS IS AN IRF 1010
LOT CODE 1789
AS S E MB LE D ON WW 19, 1997
IN T H E AS S E MB L Y L INE "C"
Note: "P" in assembly line
position indicates "Lead-Free"
10.54 (.415)
10.29 (.405)
1
2
DD
3
4
≤ V
3X
0.36 (.014)
6.47 (.255)
6.10 (.240)
0.93 (.037)
0.69 (.027)
(BR)DSS
1.15 (.045)
4.06 (.160)
3.55 (.140)
MIN
3.78 (.149)
3.54 (.139)
,
M
- A -
B A M
„
…
INT E RNAT IONAL
3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
R E CT IF IE R
AS S E MB L Y
LOT CODE
Pulse width ≤ 300µs; duty cycle ≤ 2%.
C
as C
Data and specifications subject to change without notice.
L OGO
oss
4.69 (.185)
4.20 (.165)
eff. is a fixed capacitance that gives the same charging time
oss
while V
- B -
DS
1.32 (.052)
1.22 (.048)
2.92 (.115)
2.64 (.104)
is rising from 0 to 80% V
3X
HEXFET
1- GATE
2- DRAIN
3- SOURCE
4- DRAIN
0.55 (.022)
0.46 (.018)
LEAD ASSIGNMENTS
LEAD ASSIGNMENTS
1 - GATE
2 - DRAIN
3 - SOURCE
4 - DRAIN
DAT E CODE
YE AR 7 = 1997
WE E K 19
L INE C
P ART NU MB E R
IGBTs, CoPACK
1- GATE
2- COLLECTOR
3- EMITTER
4- COLLECTOR
TAC Fax: [phone]
DSS
www.vishay.com
11/03
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