IRFB9N60APBF Vishay, IRFB9N60APBF Datasheet
IRFB9N60APBF
Specifications of IRFB9N60APBF
Available stocks
Related parts for IRFB9N60APBF
IRFB9N60APBF Summary of contents
Page 1
... Compliant to RoHS Directive 2002/95/EC D APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptible Power Supply • High Speed Power Switching APPLICABLE OFF LINE SMPS TOPOLOGIES • Active Clamped Forward S • Main Switch TO-220AB IRFB9N60APbF SiHFB9N60A-E3 IRFB9N60A SiHFB9N60A = 25 °C, unless otherwise noted) C SYMBOL ° ...
Page 2
... IRFB9N60A, SiHFB9N60A Vishay Siliconix THERMAL RESISTANCE PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...
Page 3
... Fig Typical Transfer Characteristics 3 2.5 2.0 1.5 1.0 0.5 ° 0.0 -60 -40 -20 100 Fig Normalized On-Resistance vs. Temperature This datasheet is subject to change without notice. Vishay Siliconix ° ° 50V DS 20µs PULSE WIDTH 5.0 6.0 7.0 8.0 9.0 10 Gate-to-Source Voltage ( ...
Page 4
... IRFB9N60A, SiHFB9N60A Vishay Siliconix 100000 1MHz iss rss oss ds gd 10000 C iss 1000 C oss 100 10 C rss 100 V , Drain-to-Source Voltage (V) DS Fig Typical Capacitance vs. Drain-to-Source Voltage 9. 480V 400V 300V 120V FOR TEST CIRCUIT SEE FIGURE Total Gate Charge (nC) G Fig Typical Gate Charge vs. Gate-to-Source Voltage www ...
Page 5
... Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit 125 150 10 % ° Fig. 10b - Switching Time Waveforms Notes: 1. Duty factor Peak 0.001 0. Rectangular Pulse Duration (s) 1 This datasheet is subject to change without notice. Vishay Siliconix D.U. 10V d(on) r d(off) f ...
Page 6
... IRFB9N60A, SiHFB9N60A Vishay Siliconix D.U. 0. Fig. 12a - Unclamped Inductive Test Circuit 600 500 400 300 200 100 Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ...
Page 7
... for logic level device Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91103. ...
Page 8
... F H(1) J(1) L L(1) Ø ECN: X10-0416-Rev. M, 01-Nov-10 DWG: 5471 Note * 1.62 mm (dimension including protrusion) Heatsink hole for HVM C J(1) Package Information Vishay Siliconix MILLIMETERS INCHES MIN. MAX. MIN. MAX. 4.25 4.65 0.167 0.183 0.69 1.01 0.027 0.040 1.20 1.73 ...
Page 9
... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...