IRFBE20PBF Vishay, IRFBE20PBF Datasheet - Page 5

• Manufacturer Part Number: IRFBE20PBF
• Description: N CHANNEL MOSFET, 800V, 1.8A TO-220
• Manufacturer: Vishay

Specifications of IRFBE20PBF

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 1.8A
• Drain Source Voltage Vds: 800V
• On Resistance Rds(on): 6.5ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6.5 Ohm @ 1.1A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 1.8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 530pF @ 25V
• Power - Max: 54W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 6.5 Ohm @ 10 V
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.8 A
• Power Dissipation: 54000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Fall Time: 27 ns
• Rise Time: 17 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFBE20PBF

Document Number: 91117
S11-0516-Rev. B, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
This datasheet is subject to change without notice.
90 %
10 %
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
V
V
DS
GS
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
10 V
V
GS
t
d(on)
IRFBE20, SiHFBE20
V
DS
t
r
D.U.T.
www.vishay.com/doc?91000
R
Vishay Siliconix
D
t
d(off)
t
f
+
-
www.vishay.com
V
DD
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