IRL620PBF Vishay, IRL620PBF Datasheet - Page 6

• Manufacturer Part Number: IRL620PBF
• Description: N CHANNEL MOSFET, 200V, 5.2A TO-220
• Manufacturer: Vishay

Specifications of IRL620PBF

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 5.2A
• Drain Source Voltage Vds: 200V
• On Resistance Rds(on): 800mohm
• Rds(on) Test Voltage Vgs: 5V
• Threshold Voltage Vgs Typ: 2V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 800 mOhm @ 3.1A, 5V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 5.2A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 16nC @ 5V
• Input Capacitance (ciss) @ Vds: 360pF @ 25V
• Power - Max: 50W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.8 Ohm @ 5 V
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 5.2 A
• Power Dissipation: 50000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRL620PBF

IRL620, SiHL620
Vishay Siliconix
www.vishay.com
6
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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Fig. 12a - Unclamped Inductive Test Circuit
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5 V
Fig. 13a - Basic Gate Charge Waveform
to obtain
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Charge
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D.U.T.
0.01 Ω
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Fig. 12c - Maximum Avalanche Energy vs. Drain Current
This datasheet is subject to change without notice.
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Fig. 12b - Unclamped Inductive Waveforms
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Fig. 13b - Gate Charge Test Circuit
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Same type as D.U.T.
Current regulator
0.2 µF
Current sampling resistors
3 mA
50 kΩ
0.3 µF
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S11-0519-Rev. C, 21-Mar-11
www.vishay.com/doc?91000
Document Number: 91301
D.U.T.
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