SI2302ADS-T1-GE3 Vishay, SI2302ADS-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI2302ADS-T1-GE3
• Description: N CH MOSFET
• Manufacturer: Vishay

Specifications of SI2302ADS-T1-GE3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 2.1A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 45mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 950mV
• Power Dissipation Pd: 700mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Si2302ADS
Vishay Siliconix
TYPICAL CHARACTERISTICS T
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com
4
0.001
- 0.2
- 0.3
- 0.4
- 0.5
0.10
0.01
- 0.1
0.01
100
0.3
0.2
0.1
0.0
0.1
10
1
2
1
- 50
10
0.0
-4
www.vishay.com/ppg?71831.
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Source-Drain Diode Forward Voltage
0.2
V
T
A
SD
0
= 150 °C
Threshold Voltage
- Source-to-Drain Voltage (V)
T
10
0.4
J
- Temperature (°C)
Single Pulse
-3
50
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.6
I
D
= 250 µA
T
A
0.8
A
= 25 °C
10
= 25 °C, unless otherwise noted
100
-2
1.0
Square Wave Pulse Duration (s)
150
1.2
10
-1
0.20
0.16
0.12
0.08
0.04
0.00
1
10
8
6
4
2
0
0.01
0
On-Resistance vs. Gate-to-Source Voltage
0.1
V
GS
10
2
- Gate-to-Source Voltage (V)
Single Pulse Power
1.0
Single Pulse
T
Time (s)
C
= 25 °C
4
S10-0047-Rev. I, 11-Jan-10
Document Number: 71831
100
10
I
D
= 3.6 A
6
100
600
1000
8