SI2319DS-T1-GE3 Vishay, SI2319DS-T1-GE3 Datasheet - Page 2
![no-image](/images/manufacturer_photos/0/6/697/vishay_sml.jpg)
SI2319DS-T1-GE3
Manufacturer Part Number
SI2319DS-T1-GE3
Description
P CH MOSFET
Manufacturer
Vishay
Datasheet
1.SI2319DS-T1-E3.pdf
(6 pages)
Specifications of SI2319DS-T1-GE3
Transistor Polarity
P Channel
Continuous Drain Current Id
-2.3A
Drain Source Voltage Vds
-40V
On Resistance Rds(on)
65mohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-3V
Power Dissipation Pd
750mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI2319DS-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si2319DS
Vishay Siliconix
Notes:
a. Pulse test: PW ≤ 300 µs duty cycle ≤ 2 %.
b. For design aid only, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
Turn-On Time
Turn-Off Time
b
c
a
a
a
J
= 25 °C, unless otherwise noted
a
Symbol
R
V
I
t
t
I
C
I
V
GS(th)
D(on)
DS(on)
V
Q
C
C
Q
d(on)
d(off)
GSS
DSS
Q
g
oss
t
t
DS
SD
rss
iss
fs
gs
gd
r
f
g
V
V
DS
DS
I
V
= - 40 V, V
D
V
= - 20 V, V
V
V
V
V
V
V
V
V
I
DS
GS
S
DS
DS
≅ - 1.0 A, V
GS
GS
DS
DD
DS
DS
= - 1.25 A, V
Test Conditions
= - 20 V, V
= - 4.5 V, I
= V
≤ - 5 V, V
= - 10 V, I
= 0 V, I
= 0 V, V
= - 40 V, V
= - 20 V, R
= - 5 V, I
GS
I
R
D
g
GS
≅ - 3 A
GS
, I
= 6 Ω
D
D
GS
GEN
= 0 V, T
= 0 V, f = 1 MHz
GS
D
= - 250 µA
= - 250 µA
D
GS
D
= - 3.0 A
GS
GS
= ± 20 V
L
= - 3.0 A
= - 2.4 A
= - 10 V
= - 4.5 V
= 20 Ω
= - 10 V
= 0 V
= 0 V
J
= 55 °C
Min.
- 40
- 1
- 6
Limits
0.065
0.100
Typ.
- 0.8
11.3
470
7.0
1.7
3.3
S09-0130-Rev. C, 02-Feb-09
85
65
15
25
25
7
Document Number: 72315
± 100
0.082
0.130
Max.
- 3.0
- 1.2
- 10
- 1
17
15
25
40
40
Unit
nA
µA
nC
pF
ns
Ω
V
A
S
V