SI4431BDY-T1-GE3 Vishay, SI4431BDY-T1-GE3 Datasheet
SI4431BDY-T1-GE3
Specifications of SI4431BDY-T1-GE3
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SI4431BDY-T1-GE3 Summary of contents
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... Si4431BDY-T1-E3 (Lead (Pb)-free) Ordering Information: Si4431BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS ...
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... Si4431BDY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Symbol Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...
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... 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 72092 S09-0131-Rev. C, 02-Feb- °C J 0.8 1.0 1.2 1.4 Si4431BDY Vishay Siliconix 1600 1400 1200 C 1000 iss 800 600 400 C oss C rss 200 Drain-to-Source Voltage (V) DS Capacitance 1 7 ...
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... Si4431BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.6 0 250 µA D 0.2 0.0 - 0 emperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 100 125 150 100 Limited by R DS(on D(on) 1 Limited ° ...
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... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72092. Document Number: 72092 S09-0131-Rev. C, 02-Feb- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si4431BDY Vishay Siliconix -1 1 www.vishay.com 10 5 ...
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