SI4477DY-T1-GE3 Vishay, SI4477DY-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI4477DY-T1-GE3
• Description: P CHANNEL MOSFET, -20V, 26.6A
• Manufacturer: Vishay

Specifications of SI4477DY-T1-GE3

• Transistor Polarity: P Channel
• Continuous Drain Current Id: -26.6A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 6.2mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -1.5V
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.0062 Ohms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 18 A
• Power Dissipation: 3 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Si4477DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.05
- 0.20
- 0.35
0.001
0.55
0.40
0.25
0.10
0.01
100
0.1
10
1
- 50
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
T
J
= 150 °C
V
SD
0
- Source-to-Drain Voltage (V)
Threshold Voltage
0.4
T
T
J
25
J
- Temperature (°C)
= 25 °C
0.6
50
I
D
T
= 250 µA
75
J
0.8
0.01
100
= - 50 °C
0.1
10
1
0.1
100
* V
I
Single Pulse
Limited by R
D
1.0
T
A
= 1 mA
GS
125
= 25 °C
> minimum V
V
DS
1.2
150
Safe Operating Area
- Drain-to-Source Voltage (V)
DS(on)
1
*
GS
BVDSS Limited
at which R
10
DS(on)
0.05
0.04
0.03
0.02
0.01
0.00
100
80
60
40
20
0
0
is specified
0 .
0
10 µs
100 µs
1 ms
10 ms
100 ms
1 s
10 s
0
1
On-Resistance vs. Gate-to-Source Voltage
I
D
Single Pulse Power, Junction-to-Ambient
= 18 A
100
1
V
0.01
GS
T
J
- Gate-to-Source Voltage (V)
= 25 °C
2
Time (s)
0.1
S09-0858-Rev. A, 18-May-09
Document Number: 64829
3
T
J
1
= 125 °C
4
1
5
0