SIA431DJ-T1-GE3 Vishay, SIA431DJ-T1-GE3 Datasheet - Page 5

• Manufacturer Part Number: SIA431DJ-T1-GE3
• Description: P CHANNEL MOSFET, -20V, 12A
• Manufacturer: Vishay

Specifications of SIA431DJ-T1-GE3

• Transistor Polarity: P Channel
• Continuous Drain Current Id: -12A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 25mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -850mV
• Configuration: Single
• Resistance Drain-source Rds (on): 0.07 Ohms
• Forward Transconductance Gfs (max / Min): 31 S
• Drain-source Breakdown Voltage: - 20 V
• Continuous Drain Current: - 12 A
• Power Dissipation: 19 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK SC-70-6L
• Gate Charge Qg: 60 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 65267
S09-1536-Rev. A, 10-Aug-09
25
20
15
10
5
0
0
25
T
Package Limited
C
D
- Case Temperature (°C)
is based on T
50
Current Derating*
75
J(max)
100
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
125
150
20
15
10
5
0
25
50
T
C
- Case Temperature (°C)
Power Derating
75
Vishay Siliconix
100
SiA431DJ
www.vishay.com
125
150
5