ZXMN10A07F Diodes Inc, ZXMN10A07F Datasheet - Page 2

• Manufacturer Part Number: ZXMN10A07F
• Description: N CH MOSFET, 100V, 800mA, SOT-23
• Manufacturer: Diodes Inc

Specifications of ZXMN10A07F

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 640mA
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 1ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ABSOLUTE MAXIMUM RATINGS
THERMAL RESISTANCE
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02, pulse width 300 s - pulse width limited by maximum junction temperature. Refer to
Transient Thermal Impedance graph.
ZXMN10A07F
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ V
Pulsed Drain Current
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Power Dissipation at T
Linear Derating Factor
Power Dissipation at T
Linear Derating Factor
Operating and Storage Temperature Range
PARAMETER
Junction to Ambient
Junction to Ambient
S E M I C O N D U C T O R S
(c)
(b)
(a)
A
A
=25°C
=25°C
@ V
@ V
(a)
(b)
GS
GS
GS
=10V; T
=10V; T
=10V; T
(c)
A
A
A
=25°C
=70°C
=25°C
(b)
5 secs.
(b)
(b)
(a)
SYMBOL
V
V
I
I
I
I
P
P
T
SYMBOL
R
R
D
DM
S
SM
2
D
D
j
DSS
GS
;T
JA
JA
stg
-55 to +150
VALUE
LIMIT
100
625
806
200
155
0.8
0.6
0.7
3.5
0.5
3.5
6.4
5
20
ISSUE 5 - JULY 2003
mW/°C
mW/°C
UNIT
UNIT
°C/W
°C/W
mW
mW
°C
V
V
A
A
A
A