ZXMN10A08E6 Diodes Inc, ZXMN10A08E6 Datasheet

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ZXMN10A08E6

Manufacturer Part Number
ZXMN10A08E6
Description
MOSFET, N CH, 100V, 1.9A, SOT-23
Manufacturer
Diodes Inc
Datasheet

Specifications of ZXMN10A08E6

Transistor Polarity
N Channel
Continuous Drain Current Id
1.9A
Drain Source Voltage Vds
100V
On Resistance Rds(on)
400mohm
Rds(on) Test Voltage Vgs
10V
Power Dissipation Pd
1.7W
No. Of Pins
3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
ZXMN10A08E6TA
Manufacturer:
MITSBUSHI
Quantity:
659
Price:
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
ZXMN10A08E6TC
Manufacturer:
DIODES
Quantity:
69 000
Price:
100V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.
FEATURES
APPLICATIONS
ORDERING INFORMATION
DEVICE MARKING
ISSUE 1 - MARCH 2002
DEVICE
ZXMN10A08E6TA
ZXMN10A08E6TC
(BR)DSS
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
SOT23-6 package
DC - DC Converters
Power Management Functions
Disconnect switches
Motor control
10A8
= 100V; R
DS(ON)
REEL
SIZE
13”
7”
= 0.4
WIDTH
TAPE
8mm
8mm
I
D
= 1.5A
10000 units
QUANTITY
3000 units
PER REEL
1
ZXMN10A08E6
Top View

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ZXMN10A08E6 Summary of contents

Page 1

... SOT23-6 package APPLICATIONS Converters Power Management Functions Disconnect switches Motor control ORDERING INFORMATION DEVICE REEL TAPE SIZE WIDTH ZXMN10A08E6TA 7” 8mm ZXMN10A08E6TC 13” 8mm DEVICE MARKING 10A8 ISSUE 1 - MARCH 2002 I = 1.5A D QUANTITY PER REEL 3000 units 10000 units 1 ZXMN10A08E6 Top View ...

Page 2

... ZXMN10A08E6 ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Gate Source Voltage Continuous Drain Current V GS =10V =25°C ( =10V =70°C ( =10V =25°C (a) Pulsed Drain Current (c) Continuous Source Current (Body Diode) (b) Pulsed Source Current (Body Diode) (c) Power Dissipation =25°C (a) Linear Derating Factor Power Dissipation =25°C (b) ...

Page 3

... ISSUE 1 - MARCH 2002 CHARACTERISTICS 3 ZXMN10A08E6 ...

Page 4

... ZXMN10A08E6 ELECTRICAL CHARACTERISTICS PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) Forward Transconductance (1)(3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING(2) (3) Turn-On Delay Time Rise Time Turn-Off Delay Time ...

Page 5

... ISSUE 1 - MARCH 2002 TYPICAL CHARACTERISTICS 5 ZXMN10A08E6 ...

Page 6

... ZXMN10A08E6 TYPICAL CHARACTERISTICS 6 ISSUE 1 - MARCH 2002 ...

Page 7

... REF 10° Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY11788 USA Telephone: (631) 360 2222 Fax: (631) 360 8222 7 ZXMN10A08E6 Zetex (Asia) Ltd 3701-04 Metroplaza, Tower 1 Hing Fong Road Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 ...

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