ZXMN6A11G Diodes Inc, ZXMN6A11G Datasheet - Page 2
![MOSFET, N CH, 60V, 4.4A, SOT-223](/photos/19/8/190847/4243247_sml.jpg)
ZXMN6A11G
Manufacturer Part Number
ZXMN6A11G
Description
MOSFET, N CH, 60V, 4.4A, SOT-223
Manufacturer
Diodes Inc
Datasheet
1.ZXMN6A11G.pdf
(7 pages)
Specifications of ZXMN6A11G
Transistor Polarity
N Channel
Continuous Drain Current Id
4.4A
Drain Source Voltage Vds
60V
On Resistance Rds(on)
140mohm
Rds(on) Test Voltage Vgs
10V
Power Dissipation Pd
3.9W
No. Of Pins
4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ZXMN6A11GTA
Manufacturer:
ZETEX/DIODES
Quantity:
20 000
Part Number:
ZXMN6A11GTC
Manufacturer:
ZETEX/DIODES
Quantity:
20 000
ABSOLUTE MAXIMUM RATINGS
THERMAL RESISTANCE
NOTES
(a)
(b)
(c)
ZXMN6A11G
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current V
Pulsed Drain Current
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Power Dissipation at T
Linear Derating Factor
Power Dissipation at T
Linear Derating Factor
Operating and Storage Temperature Range
PARAMETER
Junction to Ambient
Junction to Ambient
For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
For a device surface mounted on FR4 PCB measured at t 5 secs.
Repetitive rating 25mm x 25mm FRA PCB, D=0.05 pulse width = 10 s - pulse width limited by maximum junction temperature.
(a)
(b)
(c)
A
A
=25°C
=25°C
V
V
GS
GS
GS
=10V; T
=10V; T
=10V; T
(a)
(b)
(c)
A
A
A
=25°C
=70°C
=25°C
(b)
(b)
(b)
(a)
SYMBOL
V
V
I
I
I
I
P
P
T
SYMBOL
R
R
2
D
DM
S
SM
D
D
j
DSS
GS
θJA
θJA
:T
stg
-55 to +150
VALUE
LIMIT
62.5
3.8
3.0
2.7
2.0
3.9
60
10
10
16
31
32
5
20
ISSUE 3 - NOVEMBER 2004
mW/°C
mW/°C
UNIT
UNIT
°C/W
°C/W
W
W
°C
V
V
A
A
A
A