IRFF430 International Rectifier, IRFF430 Datasheet

N CH MOSFET, 500V, 2.5A, TO-205AF

IRFF430

Manufacturer Part Number
IRFF430
Description
N CH MOSFET, 500V, 2.5A, TO-205AF
Manufacturer
International Rectifier
Datasheet

Specifications of IRFF430

Transistor Polarity
N Channel
Continuous Drain Current Id
2.5A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
1.5ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFF430
Manufacturer:
ST/MOTO
Quantity:
20 000
Part Number:
IRFF430R
Manufacturer:
ST/MOTO
Quantity:
20 000
REPETITIVE A V ALANCHE AND dv/dt RATED
HEXFET TRANSISTORS
THRU-HOLE (TO-205AF)
Product Summary
The HEXFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
“State of the Art” design achieves: very low on-state resis-
tance combined with high transconductance.
The HEXFET transistors also feature all of the well
established advantages of MOSFETs such as volt-
age control, very fast switching, ease of parelleling
and temperature stability of the electrical parameters.
They are well suited for applications such as switch-
ing power supplies, motor controls, inverters, chop-
pers, audio amplifiers and high energy pulse circuits.
For footnotes refer to the last page
Absolute Maximum Ratings
I D @ V GS = 10V, T C = 100°C
I D @ V GS = 10V, T C = 25°C
www.irf.com
Part Number
IRFF430
P D @ T C = 25°C
T STG
dv/dt
I DM
E AR
E AS
V GS
I AR
T J
BVDSS
500V
R
1.5
DS(on)
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
2.5A
I
D
300 (0.063 in. (1.6mm) from case for 10s)
Features:
n
n
n
n
n
REF:MIL-PRF-19500/557
Repetitive Avalanche Ratings
Dynamic dv/dt Rating
Hermetically Sealed
Simple Drive Requirements
Ease of Paralleling
0.98(typical)
-55 to 150
500V, N-CHANNEL
0.20
0.35
±20
2.5
1.5
3.5
1 1
2 5
JANTXV2N6802
TO-39
JANTX2N6802
IRFF430
PD -90433C
Units
W/°C
V/ns
o
mJ
mJ
W
A
A
V
g
C
01/22/01
1

Related parts for IRFF430

IRFF430 Summary of contents

Page 1

... For footnotes refer to the last page www.irf.com REF:MIL-PRF-19500/557 I D 2.5A Features: n Repetitive Avalanche Ratings n Dynamic dv/dt Rating n Hermetically Sealed n Simple Drive Requirements n Ease of Paralleling 300 (0.063 in. (1.6mm) from case for 10s) PD -90433C IRFF430 JANTX2N6802 JANTXV2N6802 500V, N-CHANNEL TO-39 Units 2 0.20 W/°C ±20 V 0.35 mJ — ...

Page 2

... IRFF430 Electrical Characteristics Parameter BV DSS Drain-to-Source Breakdown Voltage BV DSS / T J Temperature Coefficient of Breakdown Voltage R DS(on) Static Drain-to-Source On-State Resistance V GS(th) Gate Threshold Voltage g fs Forward Transconductance I DSS Zero Gate Voltage Drain Current I GSS Gate-to-Source Leakage Forward I GSS Gate-to-Source Leakage Reverse Q g Total Gate Charge ...

Page 3

... Fig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics www.irf.com Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance Vs. Temperature IRFF430 3 ...

Page 4

... IRFF430 Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage 4 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 8. Maximum Safe Operating Area www.irf.com 13 a& b ...

Page 5

... Fig 9. Maximum Drain Current Vs. Case Temperature Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com D.U. 10V Pulse Width µs Duty Factor Fig 10a. Switching Time Test Circuit V DS 90% 10 d(on) r d(off) Fig 10b. Switching Time Waveforms IRFF430 ...

Page 6

... IRFF430 10V 20V Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform Fig 12c. Maximum Avalanche Energy 12V V Fig 13b. Gate Charge Test Circuit Vs. Drain Current Current Regulator Same Type as D.U.T. 50K ...

Page 7

... IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel 011 451 0111 Data and specifications subject to change without notice. 1/01 2.5A, di/dt 75A/ s, 150°C 300 s; Duty Cycle 2% LEGEND 1- SOURCE 2- GATE 3- DRAIN IRFF430 7 ...

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