SI4427BDY-T1-GE3 Vishay, SI4427BDY-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI4427BDY-T1-GE3
• Description: P CHANNEL MOSFET, -30V, 12.6A, SOIC
• Manufacturer: Vishay

Specifications of SI4427BDY-T1-GE3

• Transistor Polarity: P Channel
• Continuous Drain Current Id: -12.6A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 19.5mohm
• Rds(on) Test Voltage Vgs: -2.5V
• Threshold Voltage Vgs Typ: -1.4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Si4427BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
0.6
0.4
0.2
0.0
0.01
0.1
- 50
2
1
10 -
- 25
4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0
Threshold Voltage
T
J
- Temperature (°C)
25
10 -
3
50
I
D
Normalized Thermal Transient Impedance, Junction-to-Ambient
= 250 µA
75
0.01
100
0.1
10
100
10 -
1
0.1
Limited by
R
2
(DS)on
* V
Limited
125
I
GS
D(on)
*
Single Pulse
T
A
>
= 25 °C
150
minimum V
V
Square Wave Pulse Duration (s)
DS
Safe Operating Area
- Drain-to-Source Voltage (V)
10 -
1
1
GS
BVDSS Limited
at which R
DS(on)
10
30
25
20
15
10
1
5
0
10 -
I
is specified
DM
2
Single Pulse Power, Junction-to-Ambient
Limited
P(t) = 0.0001
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
DC
10 -
100
1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
1
-
T
Time (s)
t
1
A
S09-0764-Rev. D, 04-May-09
= P
t
2
Document Number: 72295
DM
Z
10
thJA
100
thJA
t
t
1
2
(t)
= 70 °C/W
100
600
600