SI4890DY-T1-GE3 Vishay, SI4890DY-T1-GE3 Datasheet - Page 4
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SI4890DY-T1-GE3
Manufacturer Part Number
SI4890DY-T1-GE3
Description
N CHANNEL MOSFET, 30V, 11A
Manufacturer
Vishay
Datasheet
1.SI4890DY-T1-E3.pdf
(5 pages)
Specifications of SI4890DY-T1-GE3
Transistor Polarity
N Channel
Continuous Drain Current Id
11A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
20mohm
Rds(on) Test Voltage Vgs
4.5V
Threshold Voltage Vgs Typ
10V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4890DY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si4890DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?70855.
www.vishay.com
4
- 0.2
- 0.4
- 0.6
- 0.8
0.0
0.6
0.4
0.2
- 1
50
10
1
- 50
0.01
0.1
0
2
1
10
- 25
Source-Drain Diode Forward Voltage
- 4
0.2
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
V
SD
0
0.4
T
T
J
- Source-to-Drain Voltage (V)
Threshold Voltage
J
= 150 °C
- Temperature (°C)
25
10
0.6
- 3
50
I
D
0.8
= 250 µA
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
T
J
1.0
100
= 25 °C
10
- 2
125
1.2
150
1.4
Square Wave Pulse Duration (s)
10
- 1
0.10
0.08
0.06
0.04
0.02
50
40
30
20
10
0
1
0.01
0
0
On-Resistance vs. Gate-to-Source Voltage
2
V
10
GS
0.1
Single Pulse Power
- Gate-to-Source Voltage (V)
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
4
Time (s)
- T
I
t
D
1
A
S09-0869-Rev. B, 18-May-09
= P
= 11 A
t
2
Document Number: 70855
DM
1
Z
6
thJA
100
thJA
t
t
1
2
(t)
= 70 °C/W
8
10
600
30
10