PSMN017-80PS NXP Semiconductors, PSMN017-80PS Datasheet - Page 8

• Manufacturer Part Number: PSMN017-80PS
• Description: MOSFET,N CH,80V,50A,TO-220AB
• Manufacturer: NXP Semiconductors

Specifications of PSMN017-80PS

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 80V
• On Resistance Rds(on): 13.7mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +175°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-220AB
• Rohs Compliant: Yes

NXP Semiconductors
PSMN017-80PS
Product data sheet
Fig 9.
Fig 11. Gate-source threshold voltage as a function of
V
GS(th)
R
(mΩ)
(V)
DSon
50
40
30
20
10
5
4
3
2
1
0
−60
of gate-source voltage; typical values
junction temperature
Drain-source on-state resistance as a function
4
8
0
12
60
max
min
typ
16
120
V
All information provided in this document is subject to legal disclaimers.
003aad466
GS
003aad280
T
j
(°C)
(V)
Rev. 02 — 1 November 2010
20
180
N-channel 80 V 17 mΩ standard level MOSFET in TO220
Fig 10. Sub-threshold drain current as a function of
Fig 12. Normalized drain-source on-state resistance
(A)
I
10
10
10
10
10
10
D
a
2.4
1.8
1.2
0.6
−1
−2
−3
−4
−5
−6
3
0
-60
gate-source voltage
factor as a function of junction temperature
0
0
2
PSMN017-80PS
min
60
typ
4
120
max
V
© NXP B.V. 2010. All rights reserved.
GS
003aae090
T
j
(V)
( ° C)
03aa35
180
6
8 of 15